journal article·2024

Piezoelectricity in wide bandgap semiconductor 2D crystal GaN nanosheets

Yong Wang, Shaopeng Wang, Yu Zhang, Zixuan Cheng, Dingyi Yang, Yongmei Wang, Tingting Wang, Liang Cheng, Yizhang Wu, Yue Hao

Nanoscale· Volume 16· Issue 32
Publisher page

Abstract

Gallium nitride (GaN) exhibits various potential applications in optics and optoelectronics due to its outstanding physical characteristics, including a wide direct bandgap, strong deep-ultraviolet emission, and excellent electron transport properties. However, research on the piezoelectric and related properties of GaN nanosheets are scarce, as previous small-scale GaN investigations have mainly concentrated on nanowires and nanotubes. Here, we report a strategy for growing 2D GaN nanosheets using chemical vapor deposition on Ga/W liquid-phase substrates. Additionally, utilizing scanning probe techniques, it has been observed that 700 nm-thick GaN nanosheets demonstrate a piezoelectric constant of deff33 = 1.53 ± 0.21 pm V-1 and possess the capability to effectively modulate the Schottky barrier. The piezoelectric characteristics of 2D GaN are offering new options for innovative applications in various fields, including energy harvesting, electronics, sensing, and communications.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710071, China

School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China

Department of Physics, Shaanxi University of Science and Technology, Xi'an 710021, China

INRS Centre for Energy, Materials and Telecommunications, 1650 Boul. Lionel Boulet, Varennes, QC J3X 1P7, Canada

School of Physics, Ningxia University, No. 489 Helanshan Rd., Xixia District, Yinchuan 750021, China

Department of Applied Physical Sciences, The University of North Carolina at Chapel Hill, Chapel Hill, NC, 27514, USA

Funding

National Natural Science Foundation of China · National Postdoctoral Program for Innovative Talents · Natural Science Foundation of Ningxia Province · Natural Science Foundation of Shaanxi Province · Natural Science Basic Research Program of Shaanxi Province · China Postdoctoral Science Foundation

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