journal article·2023Open access

Photoinduced interfacial electron transfer from perovskite quantum dots to molecular acceptors for solar cells

Bhagyashree Mahesha Sachith, Zhijing Zhang, Palyam Subramanyam, Challapalli Subrahmanyam, Akihiro Furube, Naoto Tamai, Takuya Okamoto, Hiroaki Misawa, Vasudevanpillai Biju

Nanoscale· Volume 15· Issue 17

Abstract

Bandgap-engineered inorganic and hybrid halide perovskite (HP) films, nanocrystals, and quantum dots (PQDs) are promising for solar cells. Fluctuations of photoinduced electron transfer (PET) rates affect the interfacial charge separation efficiencies of such solar cells. Electron donor- or acceptor-doped perovskite samples help analyze PET and harvest photogenerated charge carriers efficiently. Therefore, PET in perovskite-based donor-acceptor (D-A) systems has received considerable attention. We analyzed the fluctuations of interfacial PET from MAPbBr3 or CsPbBr3 PQDs to classical electron acceptors such as 7,7,8,8-tetracyanoquinodimethane (TCNQ) and 1,2,4,5-tetracyanobenzene (TCNB) at single-particle and ensemble levels. The significantly negative Gibbs free energy changes of PET estimated from the donor-acceptor redox potentials, the donor-acceptor sizes, and the solvent dielectric properties help us clarify the PET in the above D-A systems. The dynamic nature of PET is apparent from the decrease in photoluminescence (PL) lifetimes and PL photocounts of PQDs with an increase in the acceptor concentrations. Also, the acceptor radical anion spectrum helps us characterize the charge-separated states. Furthermore, the PL blinking time and PET rate fluctuations (108 to 107 s-1) provide us with single-molecule level information about interfacial PET in perovskites.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Perovskite Materials and Applications · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Graduate School of Environmental Science, Hokkaido University, N10W5, Sapporo, Hokkaido 060-810, Japan

Research Institute for Electronic Science, Hokkaido University, N20, W10, Sapporo, Hokkaido 001-0020, Japan

Indian Institute of Technology Hyderabad, Kandi, Telangana 502285, India

Institute of Post-LED Photonics, Tokushima University, 2-1, Minamijosanjima-cho, Tokushima, 770-8506, Japan

Department of Chemistry, School of Science and Technology, Kwansei Gakuin University, 2-1 Gakuen, Sanda, Hyogo 669-1337, Japan

Center for emergent Functional Matter Science National Yang Ming Chiao Tung University Hsinchu, 30010, Taiwan

Funding

Hokkaido University · Ministry of Education, Culture, Sports, Science and Technology

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