Pyroelectric effect mediated infrared photoresponse in Bi 2 Te 3 /Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 optothermal ferroelectric field-effect transistors
Source abstract
Abstract
A modulation of the resistance of Bi 2 Te 3 films via the pyroelectric effect in Bi 2 Te 3 /Pb(Mg 1/3 Nb 2/3 )O 3 –PbTiO 3 optothermal ferroelectric field-effect transistors.
Only a short abstract or summary was supplied by the source.
Source: crossref · Quality: short
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Topological Materials and Phenomena · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Physics and Materials Science, Guangzhou University, Guangzhou 510006, China
National Laboratory of Solid State Microstructures, College of Engineering and Applied Science & Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing 210093, China
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
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