journal article·2021

Phase transition and topological transistors based on monolayer Na3Bi nanoribbons

Bowen Shi, Hao Tang, Zhigang Song, Jingzhen Li, Lianqiang Xu, Shiqi Liu, Jie Yang, Xiaotian Sun, Ruge Quhe, Jinbo Yang, Jing Lu

Nanoscale· Volume 13· Issue 35
Publisher page

Abstract

Recently, a topological-to-trivial insulator quantum-phase transition induced by an electric field has been experimentally reported in monolayer (ML) and bilayer (BL) Na3Bi. A narrow ML/BL Na3Bi nanoribbon is necessary to fabricate a high-performance topological transistor. By using the density functional theory method, we found that wider ML Na3Bi nanoribbons (>7 nm) are topological insulators, featured by insulating bulk states and dissipationless metallic edge states. However, a bandgap is opened for extremely narrow ML Na3Bi nanoribbons (<4 nm) due to the quantum confinement effect, and its size increases with the decrease in width. In the topological insulating ML Na3Bi nanoribbons, a bandgap is opened in the metallic edge states under an external displacement electric field, with strength (∼1.0 V Å-1) much smaller than the reopened displacement electric field in ML Na3Bi (3 V Å-1). An ultrashort ML Na3Bi zigzag nanoribbon topological transistor switched by the electrical field was calculated using first-principles quantum transport simulation. It shows an on/off current/conductance ratio of 4-71 and a large on-state current of 1090 μA μm-1. Therefore, a proof of the concept of topological transistors is presented.
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Research context

OpenAlex topics: Graphene research and applications · Topological Materials and Phenomena · 2D Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China

Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan, Ningxia 756000, P. R. China

College of Chemistry and Chemical Engineering, and Henan Key Laboratory of Function-Oriented Porous Materials, Luoyang Normal University, Luoyang 471934, P. R. China

State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, P. R. China

Collaborative Innovation Center of Quantum Matter, Beijing 100871, P. R. China

Beijing Key Laboratory for Magnetoelectric Materials and Devices (BKL-MEMD), Beijing 100871, P. R. China

Peking University Yangtze Delta Institute of Optoelectronics, Peking University, Nantong 226010, P. R. China

Funding

National Natural Science Foundation of China · National Materials Genome Project · Education Department of Ningxia Hui Autonomous Region · Natural Science Foundation of Ningxia Province · Key Research and Development Program of Ningxia · Ningxia Normal University · Ministry of Science and Technology of the People's Republic of China · Peking University · Beijing University of Posts and Telecommunications

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