Silicon based Bi _0.9 La _0.1 FeO ₃ ferroelectric tunnel junction memristor for convolutional neural network application

(LSMO) on a silicon substrate. The conductance of this device was adjusted by different pulse stimulation parameter to achieve various synaptic functions because of ferroelectric polarization reversal. Based on the multiple conductance characteristics of the devices and the high linearity and symmetry of weight updating, image processing and VGG8 convolutional neural network (CNN) simulation based on the devices were realized. Excellent results of the image processing are demonstrated. The recognition accuracy of CNN offline learning reached an astonishing 92.07% based on Cifar-10 dataset. This provides a more feasible solution to break through the bottleneck of von Neumann architecture.