journal article·2022

Enhanced luminescence of erbium silicate: interstitial lithium directly regulates the lattice structure of erbium compound crystals

Huabao Shang, Deren Yang, Dongsheng Li

Nanoscale· Volume 14· Issue 37
Publisher page

Abstract

We prepared high-intensity luminescent films with a high LDP (Er3+ luminescence lifetime-concentration product) of 1.54 × 1019 s × cm-3, where lithium-doped erbium silicate grains are embedded in cristobalite. The near-infrared and up-conversion luminescence intensities of erbium silicate show ∼55 and 40 times enhancement by lithium-doping, respectively. Lithium-doping directly regulates the lattice structure of erbium silicate to enhance luminescence by reducing the crystal field symmetry around erbium, meanwhile, interstitial lithium does not dilute the concentration of erbium ions. Furthermore, lithium-containing dopants promote silica to crystallize, enhancing the luminescence of erbium silicate by reducing the interface defects. These films are expected to achieve high-gain film waveguide amplifiers in chip-scale optoelectronic integration. And this method opens up possibilities to be universally applicable to erbium compounds for enhancing luminescence by directly regulating the lattice structure.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Photorefractive and Nonlinear Optics · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, P.R. China

Funding

National Key Research and Development Program of China · National Natural Science Foundation of China

References (48)

Show source-provided references
1. An · Adv. Funct. Mater. · 2022 · 32 · 211011910.1002/adfm.202110119 ↗
2. Ma · ACS Nano · 2020 · 14 · 719110.1021/acsnano.0c02139 ↗
3. Tamalampudi · IEEE J. Sel. Top. Quantum Electron. · 2022 · 28 · 380330710.1109/JSTQE.2021.3126612 ↗
4. Zang · Appl. Phys. Lett. · 2015 · 106 · 10111110.1063/1.4915094 ↗
5. Takigawa · Opt. Express · 2011 · 19 · 1573910.1364/OE.19.015739 ↗
6. Li · Opt. Eng. · 2013 · 52 · 06400310.1117/1.OE.52.6.064003 ↗
7. Liu · Appl. Phys. Lett. · 1994 · 64 · 207910.1063/1.111689 ↗
8. Hong · Photonics Res. · 2021 · 9 · 71410.1364/PRJ.417090 ↗
9. Zhao · Opt. Mater. · 2020 · 108 · 11023210.1016/j.optmat.2020.110232 ↗
10. Miarabbas Kiani · Laser Photonics Rev. · 2022 · 16 · 210034810.1002/lpor.202100348 ↗
11. Kenyon · Semicond. Sci. Technol. · 2005 · 20 · R6510.1088/0268-1242/20/12/R02 ↗
12. Frankis · Photonics Res. · 2020 · 8 · 102210.1364/PRJ.393912 ↗
13. Ronn · Nat. Commun. · 2019 · 10 · 43210.1038/s41467-019-08369-w ↗
14. Bonneville · Opt. Express · 2020 · 28 · 3013010.1364/OE.402802 ↗
15. Li · Light: Sci. Appl. · 2020 · 9 · 3210.1038/s41377-020-0266-3 ↗
16. Xu · J. Alloys Compd. · 2021 · 885 · 16099310.1016/j.jallcom.2021.160993 ↗
17. Wen · Adv. Opt. Mater. · 2020 · 8 · 200072010.1002/adom.202000720 ↗
18. Martinez · Nanoscale · 2021 · 13 · 1626710.1039/D1NR03223B ↗
19. Kumar · Nanoscale · 2021 · 13 · 1185610.1039/D1NR02103F ↗
20. Ahiboz · Adv. Opt. Mater. · 2021 · 9 · 210128510.1002/adom.202101285 ↗
21. Ni · Appl. Phys. Lett. · 1997 · 70 · 338310.1063/1.119178 ↗
22. Binetti · Semiconductors · 1999 · 33 · 59610.1134/1.1187762 ↗
23. Yin · Appl. Phys. Lett. · 2012 · 100 · 24190510.1063/1.4729412 ↗
24. Zhou · IEEE J. Quantum Electron. · 2020 · 56 · 1100111
25. Wang · Phys. Rev. Lett. · 2015 · 115 · 02740310.1103/PhysRevLett.115.027403 ↗
26. Zhao · Opt. Lett. · 2022 · 47 · 161010.1364/OL.446752 ↗
27. Sun · Nat. Photonics · 2017 · 11 · 58910.1038/nphoton.2017.115 ↗
28. Isshiki · Appl. Phys. Lett. · 2004 · 85 · 434310.1063/1.1814814 ↗
29. Lo Savio · J. Phys.: Condens. Matter · 2008 · 20 · 454218
30. Yin · Appl. Phys. Lett. · 2013 · 103 · 12190210.1063/1.4821448 ↗
31. Zheng · Mater. Lett. · 2011 · 65 · 86010.1016/j.matlet.2010.11.067 ↗
32. Wang · Appl. Opt. · 2015 · 54 · 250110.1364/AO.54.002501 ↗
33. Shen · Opt. Express · 2020 · 28 · 1321610.1364/OE.391094 ↗
34. Fan · Opt. Commun. · 2013 · 300 · 510.1016/j.optcom.2013.03.024 ↗
35. Cao · Chin. J. Inorg. Chem. · 2011 · 27 · 776
36. Ramasamy · Nanoscale · 2013 · 5 · 871110.1039/c3nr01608k ↗
37. Dou · Langmuir · 2011 · 27 · 1323610.1021/la201910t ↗
38. Gao · Opt. Mater. Express · 2019 · 9 · 171610.1364/OME.9.001716 ↗
39. Awan · J. Phys.: Condens. Matter · 2013 · 25 · 156005
40. Liang · Integr. Ferroelectr. · 2020 · 207 · 19710.1080/10584587.2020.1728679 ↗
41. Qiao · Scr. Mater. · 2006 · 55 · 21110.1016/j.scriptamat.2006.04.023 ↗
42. Han · Angew. Chem., Int. Ed. · 2014 · 53 · 1170210.1002/anie.201403408 ↗
43. Park · Mater. Res. Bull. · 2017 · 96 · 27010.1016/j.materresbull.2017.01.027 ↗
44. de Dood · Phys. Rev. B: Condens. Matter Mater. Phys. · 2005 · 71 · 11510210.1103/PhysRevB.71.115102 ↗
45. Partlow · Phys. Rev. · 1967 · 157 · 25210.1103/PhysRev.157.252 ↗
46. Mastronardi · Nano Lett. · 2012 · 12 · 33710.1021/nl2036194 ↗
47. Ofelt · J. Chem. Phys. · 1962 · 37 · 51110.1063/1.1701366 ↗
48. Judd · Phys. Rev. · 1962 · 127 · 75010.1103/PhysRev.127.750 ↗