High optoelectronic performance of a local-back-gate ReS 2 /ReSe 2 heterojunction phototransistor with hafnium oxide dielectric
Source abstract
Abstract
Jones @ 633 nm have been demonstrated. Such high performances are attributed to the band alignment of the type-II heterojunction and the suppression of dark current by the local-back-gate. This work provides a promising reference for two-dimensional (2D) Re-based heterojunction optoelectronic devices.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China
Funding
National Natural Science Foundation of China · Natural Science Foundation of Shanghai
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