DataVXACS Applied Materials & InterfacesPaper
journal article·2026-03-18

Correction to “Achieving a High zT avg in n-Type Sb-Doped Mg 2 Si 0.3 Sn 0.7 via High-Pressure-Modulated Microstructures”

Xiangyang Dong, Ruying Zhai, Bowen Zheng, Haoxuan Guo, Xin Chen, Xiaobing Liu, Hairui Sun, Muchun Guo, Yongsheng Zhang

ACS Applied Materials & Interfaces· Volume 18· Issue 10
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OpenAlex topics: Heusler alloys: electronic and magnetic properties · Semiconductor materials and interfaces · Advanced Thermoelectric Materials and Devices

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