Correlative Nanoscale Imaging of Strained hBN Spin Defects
Source abstract
Abstract
Spin defects like the negatively charged boron vacancy color center (VB–) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, the effect of strain on VB– color centers in hBN is revealed with correlative cathodoluminescence and photoluminescence microscopies. Strong localized enhancement and redshifting of the VB– luminescence is observed at creases, consistent with density functional theory calculations showing VB– migration toward regions with moderate uniaxial compressive strain. The ability to manipulate spin defects with highly localized strain is critical to the development of practical 2D quantum devices and quantum sensors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, United States
Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
Department of Physics, Indiana University, Bloomington, Indiana 47405, United States
Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, United States
Quantum Science Center, Oak Ridge, Tennessee 37831, United States
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
Funding
U.S. Department of Defense · U.S. Department of Energy
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