DataVXACS Applied Materials & InterfacesPaper
journal article·2021-11-10Open access

Chemical Composition Control at the Substrate Interface as the Key for FeSe Thin-Film Growth

Yukiko Obata, Michiko Sato, Yuji Kondo, Yuta Yamaguchi, Igor A. Karateev, Ivan Pavlov, Alexander L. Vasiliev, Silvia Haindl

ACS Applied Materials & Interfaces· Volume 13· Issue 44
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Source abstract

Abstract

The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches toward inducing superconductivity in FeSe thin films. Our study addresses the peculiarities in pulsed laser deposition that determine FeSe thin-film growth and focuses on the film/substrate interface, which has only been considered hypothetically in the past literature. The FeSe/MgO interface has been assumed (1) to be clean and (2) to obey lattice-matching epitaxy. Our studies reveal that both assumptions are misleading and demonstrate the tendency for domain-matching epitaxial growth, which accompanies the problem of chemical heterogeneity. We propose that homogenization of the film/substrate interface by an Fe buffer can improve the control of stoichiometry and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. We will also show that on a chemically homogenized FeSe/Fe interface, the control of film texture with preparation conditions is still possible.
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Research context

NanomaterialsMaterials processing

OpenAlex topics: Iron-based superconductors research · Physics of Superconductivity and Magnetism · Magnetic properties of thin films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Tokyo Tech World Research Hub Initiative (WRHI), Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8503, Japan

National Research Centre ″Kurchatov Institute,″ pl. Akademika Kurchatova 1, Moscow 123182, Russian Federation

Shubnikov Institute of Crystallography of FSRC “Crystallography and Photonics” Russian Academy of Sciences, Leninsky pr. 59, Moscow 119333, Russian Federation

Moscow Institute of Physics and Technology, National Research University, Dolgoprudny, Moscow region 141701, Russian Federation

Funding

Ministry of Education, Culture, Sports, Science and Technology · WRHI Tokyo Tech

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