Correction to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage Operation

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to ZnO/NiO Diode-Based Charge Trapping Layer for Flash Memory Featuring Low Voltage OperationChergn-En Sun, Chin-Yu Chen, Ka-Lip Chu, Yung-Shao Shen, Chia-Chun Lin, and Yung-Hsien Wu*Cite this: ACS Appl. Mater. Interfaces 2015, 7, 18, 10067Publication Date (Web):April 29, 2015Publication History Published online29 April 2015Published inissue 13 May 2015https://pubs.acs.org/doi/10.1021/acsami.5b03117https://doi.org/10.1021/acsami.5b03117correctionACS PublicationsCopyright © 2015 American Chemical Society. This publication is available under these Terms of Use. Request reuse permissions This publication is free to access through this site. Learn MoreArticle Views480Altmetric-Citations-LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail PDF (175 KB) Get e-Alertsclose Get e-Alerts