Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

ADVERTISEMENT RETURN TO ISSUEPREVAddition/CorrectionNEXTORIGINAL ARTICLEThis notice is a correctionCorrection to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory ApplicationsHao Zhu*, Sujitra J. Pookpanratana, John E. Bonevich, Sean N. Natoli, Christina A. Hacker*, Tong Ren, John S. Suehle, Curt A. Richter, and Qiliang Li*Cite this: ACS Appl. Mater. Interfaces 2016, 8, 30, 19842Publication Date (Web):July 22, 2016Publication History Published online22 July 2016Published inissue 3 August 2016https://pubs.acs.org/doi/10.1021/acsami.6b08439https://doi.org/10.1021/acsami.6b08439correctionACS PublicationsCopyright © 2016 American Chemical Society. This publication is available under these Terms of Use. Request reuse permissions This publication is free to access through this site. Learn MoreArticle Views393Altmetric-Citations3LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InRedditEmail PDF (124 KB) Get e-Alertsclose Get e-Alerts