Highly Selective Cu Staining of Sulfur-Containing Polymers Facilitates 3D Nanomorphology Reconstruction of Polymer:Fullerene Blends in Organic Solar Cells by FIB-SEM Tomography

The distinction of different organic materials in phase mixtures is hampered in electron microscopy because electron scattering does not strongly differ in carbon-based materials that mainly consist of light elements. A successful strategy for contrast enhancement is selective staining where one phase of a material mixture is labeled by heavier elements, but suitable staining agents are not available for all organic materials. This is also the case for bulk-heterojunction (BHJ) absorber layers of organic solar cells, which consist of interpenetrating networks of donor and acceptor domains. The domain structure strongly influences the power conversion efficiency, and nanomorphology optimization often requires real-space information on the sizes and interconnectivity of domains with nanometer resolution. In this work, we have developed an efficient approach to selectively stain sulfur-containing polymers by homogeneous Cu infiltration, which generates strong material contrast in scanning (transmission) electron microscopy (S(T)EM) images of polymer:fullerene BHJ layers. Cross-section lamellae of BHJ layers are prepared for STEM by focused-ion-beam milling and are attached to a Cu lift-out grid as a copper source. After thermal treatment at 200 °C for 3 h in air, sulfur-containing polymers are homogeneously infiltrated by Cu, while the fullerenes are not affected. Selective Cu staining is applied to map the phase distribution in PTB7:PC71BM BHJ layers fabricated with different processing additives to tailor the nanomorphology. The strong contrast between polymer and fullerene domains is the prerequisite for the three-dimensional reconstruction of the domain structure by focused-ion-beam/scanning-electron-microscopy tomography.