One-Step Ge/Si Epitaxial Growth
Source abstract
Abstract
Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan 30076, Republic of China
Department of Physics, Tamkang University, Tamsui, Taiwan 25137, Republic of China
Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan 30010, Republic of China
Department of Materials Science and Engineering and ⊥Center for Nanotechnology, Materials Science, and Microsystems National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China
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