journal article·2020-05-27

Interfacial Roughness Facilitated by Dislocation and a Metal-Fuse Resistor Fabricated Using a Nanomanipulator

Junwei Zhang, Rongrong Chen, Xian Li, Yong Peng, Hongbin Ma, Yang Hu, Xue Zeng, Xia Deng, Chaoshuai Guan, Yue Hu, Mingjie Zhang, Abdul Karim, Kun Tao, Xixiang Zhang

ACS Applied Materials & Interfaces· Volume 12· Issue 21
Publisher page

Abstract

Granular magnetic systems consisting of magnetic nanoparticles embedded in a nonmagnetic metallic matrix have emerged as an attractive building block for nanodevices. A key challenge for building interface-based nanodevice applications, such as magnetic memory devices, is to clearly know about the influences of interfacial roughness on the scattering of conduction electrons. Here, we demonstrate a granular magnetic system composed of Co and Cu nanoparticles and further link the atomic structure of the Co/Cu interface to the scattering mechanism of conduction electrons. The multiple scattering is caused by the dislocations at the rough interface, which lead to a reduction of conduction efficiency and an increase of energy consumption. These dislocations mostly originate from the lattice defects on the surface of nanoparticles, the lattice mismatch of two crystal structures, and the different surface energies. Based on the negative effects of a rough interface on electronic transport, we first develop a nanometal-fuse resistor, which could hopefully be used in the protection circuits of nanodevices. Our results may open up the possibility of implementing the low-dimensional granular magnetic materials in nanodevice applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · Theoretical and Computational Physics · Metallic Glasses and Amorphous Alloys

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Magnetism and Magnetic Materials of the Ministry of Education, School of Physical Science and Technology and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, P. R. China

Qinghai Provincial Key Laboratory of New Light Alloys, Qinghai Provincial Engineering Research Center of High Performance Light Metal Alloys and Forming, Qinghai University, Xining 810016, P. R. China

School of Mathematics and Physics, Lanzhou Jiaotong University, Lanzhou 730070, P. R. China

School of Life Science and Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, P. R. China

Key Lab of Mineral Resources in Western China (Gansu), School of Earth Sciences, Lanzhou University, Lanzhou 730000, China

Department Physics, Karakorum International University, Gilgit, Gilgit-Baltistan 15100, Pakistan

Physical Science and Engineering (PSE) Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia

Funding

Ministry of Education of the People's Republic of China · Lanzhou University · National Natural Science Foundation of China · Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University

References (44)

Show source-provided references
1. 10.1126/science.112978810.1126/science.1129788 ↗
2. 10.1103/physrevlett.88.09680410.1103/physrevlett.88.096804 ↗
3. 10.1103/physrevb.67.22441510.1103/physrevb.67.224415 ↗
4. 10.1103/physrevb.69.09443210.1103/physrevb.69.094432 ↗
5. 10.1103/physrevb.82.17241010.1103/physrevb.82.172410 ↗
6. 10.1103/physrevb.93.21441310.1103/physrevb.93.214413 ↗
7. 10.12693/aphyspola.127.111510.12693/aphyspola.127.1115 ↗
8. 10.1021/acsaem.8b0055410.1021/acsaem.8b00554 ↗
9. 10.1021/jp301799710.1021/jp3017997 ↗
10. 10.1103/physrevlett.101.26680310.1103/physrevlett.101.266803 ↗
11. 10.1103/physrevlett.77.297710.1103/physrevlett.77.2977 ↗
12. 10.1063/1.10839610.1063/1.108396 ↗
13. 10.1016/j.jallcom.2016.03.03910.1016/j.jallcom.2016.03.039 ↗
14. 10.1016/s0257-8972(01)01698-x10.1016/s0257-8972(01)01698-x ↗
15. 10.1007/s10948-017-4497-310.1007/s10948-017-4497-3 ↗
16. 10.1016/j.physb.2004.09.02510.1016/j.physb.2004.09.025 ↗
17. 10.1103/physrevb.72.21240310.1103/physrevb.72.212403 ↗
18. 10.1021/acs.nanolett.5b0455310.1021/acs.nanolett.5b04553 ↗
19. 10.1103/physrevb.63.01440810.1103/physrevb.63.014408 ↗
20. 10.1103/physrevlett.93.10550310.1103/physrevlett.93.105503 ↗
21. 10.1103/physrevb.93.21441310.1103/physrevb.93.214413 ↗
22. 10.1016/j.progpolymsci.2014.06.00210.1016/j.progpolymsci.2014.06.002 ↗
23. 10.1149/2.f05112if10.1149/2.f05112if ↗
24. 10.1016/j.snb.2012.10.13410.1016/j.snb.2012.10.134 ↗
25. 10.1021/nl801820h10.1021/nl801820h ↗
26. 10.1039/c4tc01510j10.1039/c4tc01510j ↗
27. 10.1002/pssb.20104618910.1002/pssb.201046189 ↗
28. 10.1088/0957-4484/18/48/48570410.1088/0957-4484/18/48/485704 ↗
29. 10.1051/epjap:200500110.1051/epjap:2005001 ↗
30. Milchev A. · 2002
31. 10.1021/acs.jpcc.6b0499410.1021/acs.jpcc.6b04994 ↗
32. 10.1179/174591911x1301391171188810.1179/174591911x13013911711888 ↗
33. 10.1016/0013-4686(83)85163-910.1016/0013-4686(83)85163-9 ↗
34. 10.1103/physrevlett.80.287710.1103/physrevlett.80.2877 ↗
35. 10.1038/ncomms698310.1038/ncomms6983 ↗
36. 10.1038/nmat503410.1038/nmat5034 ↗
37. Coolbaugh, D. D.; Eshun, E. E.; Gebreselasie, E. G.; He, Z.X.; Ho, H. L.; Kim, D.k.; Kothandaraman, C.; Moy, D.; Rassel, R. M.; Safran, J. M.; Stein, K. J.; Robson, N. W.; Wang, P.C.; Yan, H., Metal Gate Integration Structure and Method Including Metal Fuse, Anti-fuse And/or Resistor. U.S. Patent 8,159,040 B2, 2012.
38. Shih, C.Y.; Huang, J. M., Fabrication of metal fuse design for redundancy technology having a guard ring. U.S. Patent 6,100,118 A, 2000.
39. 10.1088/0957-4484/22/24/24570910.1088/0957-4484/22/24/245709 ↗
40. 10.1039/c5tc02877a10.1039/c5tc02877a ↗
41. 10.2320/matertrans.43.162110.2320/matertrans.43.1621 ↗
42. Datta M. · 200410.1201/9780203473689 ↗
43. 10.1103/physrevb.47.55810.1103/physrevb.47.558 ↗
44. 10.1103/physrevb.54.1116910.1103/physrevb.54.11169 ↗