Solvent-Engineered Stress in Nanoscale Materials
Source abstract
Abstract
Nanoscale materials are frequently coated with surface stabilization layers during growth that prevent flocculation in solution and facilitate processing technologies such as ink-jet device printing. Here, we show that few-nanometer-thick stabilization layers typically used swell in the presence of certain solvents and impart significant stresses to the nanomaterial that remains even after the solvent has evaporated. Solvent swelling of the surface layer dramatically enhances nanomaterial-substrate adhesion via the collapse of the stabilization layer during solvent evaporation, preventing stress relaxation. We demonstrate the stress modulation of Ag, Au, and Si nanowires functionalised with surface polymers and surfactant layers and detect strain levels between 0.1 and 0.6% using atomic force microscopy mechanical measurement and Raman spectroscopy. Dry-transferred nanowires exhibit poor adhesion and show no evidence of incorporated stress but become stressed immediately following solvent exposure. Strain engineering is demonstrated by coating nanowires with few-nanometer-thick solvent-responsive polymer layers.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Carbon Nanotubes in Composites · Nanotechnology research and applications · Graphene research and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599-3290, United States
ARC Centre of Excellence in Exciton Science, School of Mathematics and Statistics, University of Melbourne, Parkville, Victoria 3010, Australia
Funding
Science Foundation Ireland · Australian Research Council · FP7 Ideas: European Research Council · Division of Materials Research
References (24)
Show source-provided references
1. 10.1186/1556-276X-7-15110.1186/1556-276X-7-151 ↗
2. 10.1016/S1381-1169(99)00098-910.1016/S1381-1169(99)00098-9 ↗
3. 10.1016/j.powtec.2008.12.01010.1016/j.powtec.2008.12.010 ↗
4. 10.1126/science.107722910.1126/science.1077229 ↗
5. 10.1088/0957-4484/24/33/33020110.1088/0957-4484/24/33/330201 ↗
6. 10.1063/1.481870810.1063/1.4818708 ↗
7. 10.1073/pnas.161528111310.1073/pnas.1615281113 ↗
8. 10.1088/0957-4484/23/49/49570210.1088/0957-4484/23/49/495702 ↗
9. 10.1063/1.354969110.1063/1.3549691 ↗
10. 10.1021/nn501403v10.1021/nn501403v ↗
11. 10.1103/PhysRevLett.101.17550210.1103/PhysRevLett.101.175502 ↗
12. 10.1021/nl052427f10.1021/nl052427f ↗
13. 10.1021/nl060028u10.1021/nl060028u ↗
14. 10.1088/1361-6528/aa7c3110.1088/1361-6528/aa7c31 ↗
15. 10.1021/cg200874g10.1021/cg200874g ↗
16. 10.1021/ja806759v10.1021/ja806759v ↗
17. 10.1021/la100253k10.1021/la100253k ↗
18. 10.1021/ma048335e10.1021/ma048335e ↗
19. 10.1021/ma500621710.1021/ma5006217 ↗
20. 10.1021/ar700097410.1021/ar7000974 ↗
21. 10.1039/C3TB21698E10.1039/C3TB21698E ↗
22. 10.1002/app.3205610.1002/app.32056 ↗
23. 10.1063/1.491901710.1063/1.4919017 ↗
24. 10.1063/1.311018410.1063/1.3110184 ↗