journal article·2018-08-29

Integration of Nanomaterials into Three-Dimensional Vertical Architectures

Jiaying Wang, Stefan Wagner, Wenjun Chen, Yuesong Shi, Abdoulaye Ndao, Leon Li, Boubacar Kante, Donald Sirbuly, Max C. Lemme, Oscar Vazquez-Mena

ACS Applied Materials & Interfaces· Volume 10· Issue 34
Publisher page

Abstract

A novel layer-by-layer three-dimensional (3D) architecture allowing one to expand device fabrication in the vertical direction and integrating functional nanomaterials is presented by emulating civil engineering. The architecture uses SU-8 pillars as structural columns, which support multiple horizontal suspended thin films. The films then serve as platforms for the integration of nanomaterials and nanodevices. Multiple graphene layers suspended across SU-8 pillars with precise control on their vertical spacing are demonstrated. In addition to graphene, silicon nitride films that offer high strength yield and thickness control are also presented. Metallic microstructures, plasmonic nanostructures, semiconducting quantum dots, and monolayer graphene on the suspended films are achieved to prove the capability of integrating functional nanomaterials. This work provides the potential to integrate highly compact micro/nanoscale devices at different vertical levels with high surface density, which allows for more capabilities and functionalities in a single device.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Nanowire Synthesis and Applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany

Advanced Microelectronic Center Aachen, AMO GmbH, Otto-Blumenthal-Strasse 25, 52074 Aachen, Germany

Funding

Defense Advanced Research Projects Agency · University of California, San Diego

References (30)

Show source-provided references
1. Im, J.W.; Jeong, W.P.; Kim, D.H.; Nam, S.W.; Shim, D.K.; Choi, M.H.; Yoon, H.J.; Kim, D.H.; Kim, Y.S.; Park, H.W. 7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate. Solid-State Circuits Conference (ISSCC), 2015 IEEE International Conference; IEEE, 2015; pp 1–3.10.1109/ISSCC.2015.7062960 ↗
2. 10.1109/JSSC.2014.235229310.1109/JSSC.2014.2352293 ↗
3. 10.1038/nature2299410.1038/nature22994 ↗
4. 10.1002/adma.20080360610.1002/adma.200803606 ↗
5. 10.1002/smll.20090193410.1002/smll.200901934 ↗
6. 10.1039/c2nr31467c10.1039/c2nr31467c ↗
7. 10.1007/s00170-012-4605-210.1007/s00170-012-4605-2 ↗
8. 10.1080/17452759.2015.109705410.1080/17452759.2015.1097054 ↗
9. 10.1007/s00542-017-3342-810.1007/s00542-017-3342-8 ↗
10. 10.1038/1798910.1038/17989 ↗
11. 10.1002/lpor.20110004610.1002/lpor.201100046 ↗
12. 10.1063/1.369318110.1063/1.3693181 ↗
13. 10.1002/adom.20130041510.1002/adom.201300415 ↗
14. 10.1088/0960-1317/17/6/R0110.1088/0960-1317/17/6/R01 ↗
15. 10.1021/nn300334510.1021/nn3003345 ↗
16. 10.1002/adma.20140537010.1002/adma.201405370 ↗
17. 10.1039/C4EE00050A10.1039/C4EE00050A ↗
18. 10.1021/nn507079x10.1021/nn507079x ↗
19. 10.1021/nl102713c10.1021/nl102713c ↗
20. 10.1021/nl501655210.1021/nl5016552 ↗
21. 10.1039/C5NR08668J10.1039/C5NR08668J ↗
22. 10.1021/acs.nanolett.6b0454610.1021/acs.nanolett.6b04546 ↗
23. 10.1149/1.240344010.1149/1.2403440 ↗
24. 10.1126/science.115696510.1126/science.1156965 ↗
25. 10.1103/PhysRevLett.101.08740310.1103/PhysRevLett.101.087403 ↗
26. 10.1038/nnano.2010.20210.1038/nnano.2010.202 ↗
27. 10.1038/lsa.2014.310.1038/lsa.2014.3 ↗
28. 10.1039/C7LC00277G10.1039/C7LC00277G ↗
29. 10.1016/j.mee.2014.08.00310.1016/j.mee.2014.08.003 ↗
30. 10.1364/JOSAB.10.00010010.1364/JOSAB.10.000100 ↗