journal article·2024-12-11

Laser Liftoff Enabled Batch Fabrication of Ultrathin Graphene Hall Devices

Jinpeng Tian, Junqi Huang, Man Wang, Keqing Yu, Hu Guo, Wenchao Luo, Yinghui Dong, Yizhe Wang, Zhixing Zhang, Wenwei Zhang, Cheng Wang, Yuan Jia

ACS Applied Materials & Interfaces· Volume 16· Issue 49
Publisher page

Abstract

When optimizing the interface between low-dimensional materials and flexible substrates, the surface properties are essential for preserving their exceptional electronic properties. This study presents an approach to fabricating flexible low-dimensional electronic devices using a laser liftoff process that enables optimal interface quality and batch fabrication. Graphene Hall sensors on 6-μm polyimide substrates were batch-fabricated to demonstrate the utility of this approach. The sensors showed a linear response to magnetic fields up to 25 mT and an average current-normalized sensitivity of 140 V AT –1, outperforming other flexible graphene Hall devices without gate modulation or encapsulation. Owing to the ultrathin substrate, sensor-bending tests showed stable electrical characteristics under strain. The developments in this study represent a step toward extending the applications of low-dimensional flexible electronics.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Graphene research and applications · Advanced Sensor and Energy Harvesting Materials · Magnetic Field Sensors Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Industrialization Center of Micro & Nano ICs and Devices, Sino-German College of Intelligent Manufacturing, Shenzhen Technology University, Shenzhen 518118, China

Tianjin Key Laboratory of Wireless Mobile Communications and Power Transmission, College of Electronic and Communication Engineering, Tianjin Normal University, Tianjin 300387, China

Department of Intelligence Science and Technology, College of Artificial Intelligence, Tianjin Normal University, Tianjin 300387, China

College of Integrated Circuits and Optoelectronics Chips, Shenzhen Technology University, Shenzhen 518118, China

College of New Materials and New Energies, Shenzhen Technology University, Shenzhen 518118, China

State Key laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, China

Funding

Guangdong Provincial Engineering Technology Research Center for Materials for Advanced MEMS Sensor Chip · Natural Science Foundation of Top Talent of SZTU · the State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment

References (40)

Show source-provided references
1. 10.1063/1.307702110.1063/1.3077021 ↗
2. 10.1088/1361-648X/abf7e210.1088/1361-648X/abf7e2 ↗
3. 10.1038/s41598-019-54489-010.1038/s41598-019-54489-0 ↗
4. 10.1002/adma.20190198110.1002/adma.201901981 ↗
5. 10.1002/pssb.20160022410.1002/pssb.201600224 ↗
6. 10.1039/C5NR08729E10.1039/C5NR08729E ↗
7. 10.1038/s41528-021-00100-410.1038/s41528-021-00100-4 ↗
8. 10.1088/2053-1583/aa5b0f10.1088/2053-1583/aa5b0f ↗
10. 10.1039/C8NR04315A10.1039/C8NR04315A ↗
11. 10.1088/2053-1583/ab4c0f10.1088/2053-1583/ab4c0f ↗
12. 10.1021/acsaelm.9b0012210.1021/acsaelm.9b00122 ↗
13. 10.1038/s42254-018-0016-010.1038/s42254-018-0016-0 ↗
14. 10.1103/PhysRevB.81.08140710.1103/PhysRevB.81.081407 ↗
15. 10.1038/s41528-022-00145-z10.1038/s41528-022-00145-z ↗
16. 10.1016/j.phpro.2013.03.07510.1016/j.phpro.2013.03.075 ↗
17. 10.1016/j.optlastec.2021.10724510.1016/j.optlastec.2021.107245 ↗
18. 10.1007/s11431-018-9349-x10.1007/s11431-018-9349-x ↗
19. 10.1063/1.492804510.1063/1.4928045 ↗
20. 10.1088/1361-6641/aa952e10.1088/1361-6641/aa952e ↗
21. 10.1016/j.tsf.2005.09.08910.1016/j.tsf.2005.09.089 ↗
22. 10.1088/2053-1583/aaf20a10.1088/2053-1583/aaf20a ↗
23. 10.1103/PhysRevLett.117.20550110.1103/PhysRevLett.117.205501 ↗
24. 10.1103/PhysRevLett.105.26660110.1103/PhysRevLett.105.266601 ↗
25. 10.1103/PhysRevApplied.22.01407110.1103/PhysRevApplied.22.014071 ↗
26. 10.1021/acsami.8b1786910.1021/acsami.8b17869 ↗
28. 10.1038/s41928-021-00598-610.1038/s41928-021-00598-6 ↗
29. 10.1021/nl303666m10.1021/nl303666m ↗
30. 10.1063/1.487559710.1063/1.4875597 ↗
31. 10.1063/1.482127010.1063/1.4821270 ↗
32. 10.1109/LED.2008.201192910.1109/LED.2008.2011929 ↗
33. 10.1016/j.mser.2017.05.00110.1016/j.mser.2017.05.001 ↗
34. 10.1021/acsami.4c0545110.1021/acsami.4c05451 ↗
35. 10.1016/j.apsusc.2015.04.20110.1016/j.apsusc.2015.04.201 ↗
36. 10.1109/LED.2011.216348910.1109/LED.2011.2163489 ↗
37. 10.3762/bjnano.4.2410.3762/bjnano.4.24 ↗
38. 10.1073/pnas.130650811010.1073/pnas.1306508110 ↗
39. 10.1038/srep2285810.1038/srep22858 ↗
40. Nagashio K. · 201210.1109/IEDM.2012.6478975 ↗