journal article·2024-08-28

Observation of Moment-Dependent and Field-Driven Unidirectional Magnetoresistance in CoFeB/InSb/CdTe Heterostructures

Jiuming Liu, Liyang Liao, Bin Rong, Yuyang Wu, Hanzhi Ruan, Yu Zhang, Zhenghang Zhi, Xinqi Liu, Puyang Huang, Shan Yao, Xinyu Cai, Chenjia Tang, Qi Yao, Lu Sun, Yumeng Yang, Guoqiang Yu, Renchao Che, Xufeng Kou

ACS Applied Materials & Interfaces· Volume 16· Issue 34
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Abstract

Magnetoresistance effects are crucial for understanding the charge-spin transport as well as propelling the advancement of spintronic applications. Here, we report the coexistence of magnetic-moment-dependent (MD) and magnetic-field-driven (FD) unidirectional magnetoresistance (UMR) effects in CoFeB/InSb/CdTe heterostructures. The strong spin-orbital coupling of InSb and the matched impedance at the CoFeB/InSb interface warrant a distinct MD-UMR effect at room temperature, while the interaction between the in-plane magnetic field and the Rashba effect at the InSb/CdTe interface induces the marked FD-UMR signal that dominates the high-field region. Moreover, owning to different spin scattering mechanisms, these two types of non-reciprocal charge transports show opposite polarities with respect to the magnetic field direction, which further enables an effective phase modulation of the angular-dependent magnetoresistance. The demonstration of the tunable UMR response validates our CoFeB/InSb/CdTe system as a suitable integrated building block for multifunctional spintronic memory and sensor designs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China

Institute for Solid State Physics, University of Tokyo, Kashiwa 277-8581, Japan

Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200438, People’s Republic of China

Department of Materials Science, Fudan University, Shanghai 200438, People’s Republic of China

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China

University of Chinese Academy of Science, Beijing 101408, People’s Republic of China

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People’s Republic of China

ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, People’s Republic of China

Funding

National Key Research and Development Program of China · Science and Technology Commission of Shanghai Municipality · ShanghaiTech University · National Natural Science Foundation of China · Shanghai Engineering Research Center of. Energy Efficient and Custom AI IC, ShanghaiTech University · State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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