DataVXACS Applied Materials & InterfacesPaper
journal article·2021-08-11Open access

A Simplified Method for Patterning Graphene on Dielectric Layers

Håkon I. Røst, Benjamen P. Reed, Frode S. Strand, Joseph A. Durk, D. Andrew Evans, Antonija Grubišić-Čabo, Gary Wan, Mattia Cattelan, Mauricio J. Prieto, Daniel M. Gottlob, Liviu C. Tănase, Lucas de Souza Caldas, Thomas Schmidt, Anton Tadich, Bruce C. C. Cowie, Rajesh Kumar Chellappan, Justin W. Wells, Simon P. Cooil

ACS Applied Materials & Interfaces· Volume 13· Issue 31
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Source abstract

Abstract

The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600-700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.
Source: europepmc · Quality: candidate unverified · Source record ↗

Research context

Nanomaterials

OpenAlex topics: Graphene research and applications · Photonic Crystals and Applications · Graphene and Nanomaterials Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway

Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, United Kingdom

School of Physics & Astronomy, Monash University, 1 Wellington Rd., Clayton, Victoria 3800, Australia

School of Physics, HH Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom

School of Chemistry, University of Bristol, Cantocks Close, Bristol BS8 1TS, United Kingdom

Department of Interface Science, Fritz-Haber-Institute of the Max-Planck Society, Faradayweg 4-6, 14195 Berlin, Germany

Australian Synchrotron, 800 Blackburn Rd., Clayton, Victoria 3168, Australia

Semiconductor Physics, Department of Physics, University of Oslo (UiO), NO-0371 Oslo, Norway

Funding

Bundesministerium f??r Bildung und Forschung · Norges Forskningsr??d · European Regional Development Fund · Deutsche Forschungsgemeinschaft · Max-Planck-Gesellschaft · Welsh European Funding Office (WEFO) · EPSRC Centre for Doctoral Training in Diamond Science and Technology

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