journal article·2023-03-15

Revealing Surface and Interface Evolution of Molybdenum Nitride as Carrier-Selective Contacts for Crystalline Silicon Solar Cells

Yajuan Li, Yuxiong Li, Julian E. Heger, Jungui Zhou, Tianfu Guan, Christopher R. Everett, Wei Wei, Zhiwei Hong, Yanfei Wu, Xinyu Jiang, Shanshan Yin, Xinbo Yang, Dongdong Li, Chunping Jiang, Baoquan Sun, Peter Müller-Buschbaum

ACS Applied Materials & Interfaces· Volume 15· Issue 10
Publisher page

Abstract

Molybdenum nitride (MoN x ) was perceived as carrier-selective contacts (CSCs) for crystalline silicon (c-Si) solar cells due to having proper work functions and excellent conductivities. However, the poor passivation and non-Ohmic contact at the c-Si/MoN x interface endow an inferior hole selectivity. Here, the surface, interface, and bulk structures of MoN x films are systematically investigated by X-ray scattering, surface spectroscopy, and electron microscope analysis to reveal the carrier-selective features. Surface layers with the composition of MoO 2.51 N 0.21 form upon air exposure, which induces the overestimated work function and explains the origin of inferior hole selectivities. The c-Si/MoN x interface is confirmed to adopt long-term stability, providing guidance for designing stable CSCs. A detailed evolution of the scattering length density, domain sizes, and crystallinity in the bulk phase is presented to elucidate its superior conductivity. These multiscale structural investigations offer a clear structure–function correlation of MoN x films, providing key inspiration for developing excellent CSCs for c-Si solar cells.
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Research context

OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou 215009, P. R. China

Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, P. R. China

TUM School of Natural Sciences, Department of Physics, Chair for Functional Materials, Technical University of Munich, James-Franck-Str. 1, 85748 Garching, Germany

Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China

Nano-X, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123, P. R. China

College of Energy, Soochow University, Suzhou 215006, P. R. China

Key Lab of Low-Carbon Conversion Science and Engineering, Shanghai Advanced Research Institute, Chinese Academy of Sciences(CAS), 99 Haike Road, Zhangjiang Hi-Tech Park, Pudong, Shanghai 201210, P. R. China

Heinz Maier-Leibnitz Zentrum (MLZ), Technical University of Munich, Lichtenbergstr. 1, 85748 Garching, Germany

Funding

Collaborative Innovation Center of Suzhou Nano Science and Technology · Deutsche Forschungsgemeinschaft · Center for NanoScience, Ludwig-Maximilians-Universit?t M?nchen · Bayerisches Staatsministerium f?r Bildung und Kultus, Wissenschaft und Kunst · China Scholarship Council · Jiangsu Science and Technology Department · National Natural Science Foundation of China · Priority Academic Program Development of Jiangsu Higher Education Institutions · Higher Education Discipline Innovation Project · Alberta / Technical University of Munich International Graduate School for Hybrid Functional Materials

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