Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films
Source abstract
Abstract
Spatial variations in surface potential are measured with Kelvin probe force microscopy for thin films of 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophenes (diF-TES-ADT) grown on SiO2 and silane-treated SiO2 substrates by organic molecular beam deposition. The variations are observed both between and within grains of the polycrystalline organic film and are quantitatively different than electrostatic variations on the substrate surfaces. The skewness of surface potential distributions is larger on SiO2 than on HMDS-treated substrates. This observation is attributed to the impact of substrate functionalization on minimizing intrinsic crystallographic defects in the organic film that can trap charge.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Molecular Junctions and Nanostructures · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
Organic and Carbon Electronics Lab (ORaCEL), North Carolina State University, Raleigh, North Carolina 27695, United States
Department of Physics and Astronomy, Appalachian State University, Boone, North Carolina 28608, United States
Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506, United States
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