Dielectric-on-Dielectric Achieved on SiO2in Preference to W by Water-free Chemical Vapor Depositions with Aniline Passivation
Source abstract
Abstract
Selective and smooth dielectric-on-dielectric was achieved by water-free single-precursor chemical vapor deposition (CVD) processes with the help of aniline passivation. Aniline selective passivation was demonstrated on W surfaces in preference to SiO 2 at 250, 300, and 330 °C. After aniline passivation, selective HfO 2, Al 2 O 3, and TiO 2 were deposited only on the HF-cleaned SiO 2 surface by water-free single-precursor CVD using hafnium tert -butoxide Hf(O t Bu) 4, aluminum-tri- sec -butoxide (ATSB), and titanium isopropoxide Ti(O i Pr) 4 as the precursor reactants, respectively. Hf(O t Bu) 4 and Ti(O i Pr) 4 single-precursor CVD was carried out at 300 °C, while the ATSB CVD process was conducted at 330 °C. HfO 2 and Al 2 O 3 nanoselectivity tests were performed on W/SiO 2 patterned samples. Transmission electron microscopy images of the W/SiO 2 patterned samples after deposition demonstrated nanoselectivity and low surface roughness of HfO 2 and Al 2 O 3 deposition on the SiO 2 regions only.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science and Engineering, University of California, San Diego, La Jolla California 92093, United States
Electrical and Computer Engineering, University of California, San Diego, La Jolla California 92093, United States
Applied Materials, Inc., Santa Clara, California 95054, United States
Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla California 92093, United States
Funding
Applied Materials
References (38)
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