Interfacial Cyclic Fatigue of Atomic-Layer-Deposited Alumina Coatings on Silicon Thin Films
Source abstract
Abstract
A microresonator-based interfacial fatigue testing technique was used to investigate the subcritical delamination of atomic-layer-deposited alumina coatings along the sidewalls of deep-reactive-ion-etched monocrystalline silicon thin films. This technique ensures loading conditions relevant to microelectromechanical system devices, including kHz testing frequency and fully reversed cyclic stresses. Four different coating thicknesses (4.2, 12.6, 25, and 50 nm) were investigated in two environments (30 °C, 50% relative humidity (RH) and 80 °C, 90% RH). Fatigue damage, in the form of channel cracks and delamination of the alumina coating, was found to accumulate slowly over more than 1 × 10(8) cycles. The average delamination rates increase with increasing energy release rate amplitude for delamination, modeled with a power law relationship. In the harsher environment, the rates are roughly 1 order of magnitude higher. Additionally, a few tests under static load were conducted for which no delamination (or crack growth) occurred, demonstrating that the governing interfacial fatigue mechanism is cycle-dependent.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Acoustic Wave Resonator Technologies · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0405, United States
References (40)
Show source-provided references
1. Seo J. · Microelectromech. Syst. · 2008 · 17 · 48310.1109/JMEMS.2008.916328 ↗
2. Hoivik N. D. · Sens. Actuators, A · 2003 · 103 · 10010.1016/S0924-4247(02)00319-9 ↗
3. Puurunen R. L. · ECS Trans. · 2007 · 11 · 310.1149/1.2779063 ↗
4. Stoldt C. R. · J. Phys. D: Appl. Phys. · 2006 · 39 · R16310.1088/0022-3727/39/9/R01 ↗
5. Mayer T. M. · Appl. Phys. Lett. · 2003 · 82 · 288310.1063/1.1570926 ↗
6. Budnitzki M. · Appl. Phys. Lett. · 2009 · 94 · 14190610.1063/1.3112565 ↗
7. Baumert E. K. · Scr. Mater. · 2011 · 65 · 59610.1016/j.scriptamat.2011.06.034 ↗
8. McNaney J. M. · Acta Mater. · 1996 · 44 · 471310.1016/S1359-6454(96)00126-7 ↗
9. Dauskardt R. · Eng. Fract. Mech. · 1998 · 61 · 14110.1016/S0013-7944(98)00052-6 ↗
10. Xu G. · Acta Mater. · 1999 · 47 · 413110.1016/S1359-6454(99)00272-4 ↗
11. Lane M. · J. Mater. Res. · 2000 · 15 · 275810.1557/JMR.2000.0395 ↗
12. Zhou Y. C. · Surf. Coat. Technol. · 2002 · 157 · 11810.1016/S0257-8972(02)00154-8 ↗
13. Kruzic J. J. · Mech. Mater. · 2004 · 36 · 5710.1016/S0167-6636(03)00031-0 ↗
14. Zheng J. T. · IEEE Trans. Compon. Packag. Technol. · 2010 · 33 · 64810.1109/TCAPT.2010.2058113 ↗
15. Ostrowicki G. T. · Thin Solid Films · 2012 · 520 · 398710.1016/j.tsf.2012.01.042 ↗
16. Cannon R. M. · Acta Metall. Mater. · 1991 · 39 · 214510.1016/0956-7151(91)90184-3 ↗
17. Lane M. W. · Microelectron. Reliab. · 2001 · 41 · 161510.1016/S0026-2714(01)00150-0 ↗
18. Hirakata H. · Acta Mater. · 2006 · 54 · 8910.1016/j.actamat.2005.08.026 ↗
19. Yan Y. B. · Sci. Eng., A · 2012 · 556 · 14710.1016/j.msea.2012.06.070 ↗
20. Tripp M. K. · Sens. Actuators, A · 2006 · 130 · 41910.1016/j.sna.2006.01.029 ↗
21. Jen S. H. · J. Appl. Phys. · 2011 · 109
22. Bull S. J. · J. Vac. Sci. Technol., A · 2012 · 30 · 01A16010.1116/1.3670401 ↗
23. Miller D. C. · J. Appl. Phys. · 2009 · 105 · 12
24. Tapily K. · J. Electrochem. Soc. · 2008 · 155 · H54510.1149/1.2919106 ↗
25. Miller D. C. · Sens. Actuators, A · 2010 · 164 · 5810.1016/j.sna.2010.09.018 ↗
26. Ou K. · Mater. Res. Soc. Symp. Proc. · 2009 · 1222 · 111
27. Baumert E. K. · Appl. Phys. Lett. · 2012 · 101 · 25190110.1063/1.4772471 ↗
28. Birringer R. P. · Eng. Fract. Mech. · 2011 · 78 · 239010.1016/j.engfracmech.2011.05.010 ↗
29. Theillet P. O. · Appl. Phys. Lett. · 2009 · 94 · 18191510.1063/1.3133357 ↗
30. Straub T. · J. Microelectromech. Syst. · 2013 · 22 · 41810.1109/JMEMS.2012.2226933 ↗
31. Burns D. J. · J. Microelectromech. Syst. · 1999 · 8 · 47310.1109/84.809063 ↗
32. Baumert E. K. · Acta Mater. · 2010 · 58 · 285410.1016/j.actamat.2010.01.011 ↗
33. Freund L. B. · 2003
34. Hull R. I. I. S. · 1999 · 20
35. Suo Z. G. · Int. J. Fract. · 1990 · 43 · 110.1007/BF00018123 ↗
36. Hosseinian E. · Sens. Actuators, A · 2013 · 189 · 38010.1016/j.sna.2012.09.020 ↗
37. Evans A. · Metall. Trans. · 1974 · 5 · 2710.1007/BF02642921 ↗
38. Bhatnagar A. · J. Am. Ceram. Soc. · 2000 · 83 · 58510.1111/j.1151-2916.2000.tb01237.x ↗
39. Wiederhorn S. M. · J. Am. Ceram. Soc. · 1967 · 50 · 40710.1111/j.1151-2916.1967.tb15145.x ↗
40. Ritchie R. · Int. J. Fract. · 1999 · 100 · 5510.1023/A:1018655917051 ↗