journal article·2022-06-29Open access

The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins

Chappel S. Thornton, Blair Tuttle, Emily Turner, Mark E. Law, Sokrates T. Pantelides, George T. Wang, Kevin S. Jones

ACS Applied Materials & Interfaces· Volume 14· Issue 25

Abstract

A recently discovered, enhanced Ge diffusion mechanism along the oxidizing interface of Si/SiGe nanostructures has enabled the formation of single-crystal Si nanowires and quantum dots embedded in a defect-free, single-crystal SiGe matrix. Here, we report oxidation studies of Si/SiGe nanofins aimed at gaining a better understanding of this novel diffusion mechanism. A superlattice of alternating Si/Si0.7Ge0.3 layers was grown and patterned into fins. After oxidation of the fins, the rate of Ge diffusion down the Si/SiO2 interface was measured through the analysis of HAADF-STEM images. The activation energy for the diffusion of Ge down the sidewall was found to be 1.1 eV, which is less than one-quarter of the activation energy previously reported for Ge diffusion in bulk Si. Through a combination of experiments and DFT calculations, we propose that the redistribution of Ge occurs by diffusion along the Si/SiO2 interface followed by a reintroduction into substitutional positions in the crystalline Si.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, United States

Department of Physics, The Pennsylvania State University- Behrend, Erie, Pennsylvania 16563, United States

Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37212, United States

Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, United States

Department of Electrical and Computer Engineering, Vanderbilt University, Nashville, Tennessee 37212, United States

Advanced Materials Sciences, Sandia National Laboratories, Albuquerque, New Mexico 87158, United States

Funding

Vanderbilt University · Air Force Research Laboratory · U.S. Department of Energy

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