Low-Energy-Consumption Three-Valued Memory Device Inspired by Solid-State Batteries
Source abstract
Abstract
We report the creation of a low-energy-consumption three-valued memory device based on the switching of open-circuit voltages. This device consists of a stack of Li, Li3PO4 solid electrolyte, and Ni electrode films. We observed reversible voltage switching between high, intermediate, and low open-circuit voltages. According to the scaling law, the energy required to switch a device is estimated to be 8.8 × 10–11 J/μm2 and this value is almost 1/50 of that of a typical dynamic random access memory. Both the high- and low-voltage states converged to the intermediate-voltage state, indicating that the intermediate-voltage state is the most stable metastable state.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Funding
Core Research for Evolutional Science and Technology · Precursory Research for Embryonic Science and Technology · Japan Society for the Promotion of Science
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