AC-Impedance Spectroscopic Analysis on the Charge Transport in CVD-Grown Graphene Devices with Chemically Modified Substrates
Source abstract
Abstract
A comprehensive study for the effect of interfacial buffer layers on the electrical transport behavior in CVD-grown graphene based devices has been performed by ac-impedance spectroscopy (IS) analysis. We examine the effects of the trap charges at graphene/SiO 2 interface on the total capacitance by introducing self-assembled monolayers (SAMs). Furthermore, the charge transports in the polycrystalline graphene are characterized through the temperature-dependent IS measurement, which can be explained by the potential barrier model. The frequency-dependent conduction reveals that the conductivity of graphene is related with the mobility, which is limited by the scattering caused by charged adsorbates on SiO 2 surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · Advancements in Battery Materials · Nanopore and Nanochannel Transport Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Thin Film Materials Research Center, Korea Research Institute of Chemical Technology (KRICT), Yuseong, Daejeon 305-600, Republic of Korea
Department of Physics, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 440-746, Republic of Korea
Department of Chemical Engineering and Materials Science, University of California, Davis, California 95616-5294, United States
Funding
Ministry of Education, Science and Technology
References (28)
Show source-provided references
1. 10.1038/nmat184910.1038/nmat1849 ↗
2. 10.1126/science.115696510.1126/science.1156965 ↗
3. 10.1038/nature0423310.1038/nature04233 ↗
4. 10.1021/nl803316h10.1021/nl803316h ↗
5. 10.1038/srep0406410.1038/srep04064 ↗
6. 10.1126/science.110289610.1126/science.1102896 ↗
7. 10.1038/nmat238210.1038/nmat2382 ↗
8. 10.1038/nature0771910.1038/nature07719 ↗
9. 10.1126/science.117124510.1126/science.1171245 ↗
10. 10.1038/nmat301010.1038/nmat3010 ↗
11. 10.1038/srep0033710.1038/srep00337 ↗
12. 10.1016/j.diamond.2014.03.00310.1016/j.diamond.2014.03.003 ↗
13. 10.1039/c3nr06828e10.1039/c3nr06828e ↗
14. Peres N. M. R. · Phys. Rev. B · 2006 · 73 · 12541110.1103/PhysRevB.73.125411 ↗
15. 10.1103/PhysRevB.84.03542110.1103/PhysRevB.84.035421 ↗
16. 10.1038/nnano.2008.5810.1038/nnano.2008.58 ↗
17. 10.1038/nphys93510.1038/nphys935 ↗
18. 10.1021/nl902788u10.1021/nl902788u ↗
19. 10.1038/nchem.142110.1038/nchem.1421 ↗
20. 10.1002/adma.20110134010.1002/adma.201101340 ↗
21. 10.1063/1.480428810.1063/1.4804288 ↗
22. 10.1021/nl100587e10.1021/nl100587e ↗
23. 10.1021/acsami.5b0338010.1021/acsami.5b03380 ↗
24. 10.1063/1.482914010.1063/1.4829140 ↗
25. 10.1038/srep1600110.1038/srep16001 ↗
26. 10.1002/sia.135810.1002/sia.1358 ↗
27. 10.1103/PhysRevB.89.12542210.1103/PhysRevB.89.125422 ↗
28. 10.1103/RevModPhys.72.87310.1103/RevModPhys.72.873 ↗