Novel Aspect in Grain Size Control of Nanocrystalline Diamond Film for Thin Film Waveguide Mode Resonance Sensor Application
Source abstract
Abstract
Nanocrystalline diamond (NCD) thin film growth was systematically investigated for application for the thin film waveguide mode resonance sensor. The NCD thin film was grown on the Si wafer or on the SiO2-coated sapphire substrate using the hot filament chemical vapor deposition (HFCVD). The structural/optical properties of the samples were characterized by the high-resolution scanning electron microscopy (HRSEM), high-resolution transmission electron microscopy (HRTEM), energy dispersive X-ray spectroscopy (EDS), near edge X-ray absorption fine structure (NEXAFS), X-ray diffraction (XRD), and ultraviolet-visible (UV-vis) spectroscopy. The waveguide modes of the NCD layer were studied by prism coupler technique using laser (wavelength: 632.8 nm) with varying incident angle. A novel aspect was disclosed in the grain size dependence on the growth temperature at the relatively low methane concentration in the precursor gas, which was important for optical property: the grain size increased with decreasing growth temperature, which was contrary to the conventional knowledge prevailing in the microcrystalline diamond (MCD) domain. We have provided discussions to reconcile such observation. An optical waveguide mode resonance was demonstrated in the visible region using the microstructure-controlled transparent NCD thin film waveguide, which provided a strong potential for the waveguide mode resonance sensor applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Electronic Materials Center, Korea Institute of Science and Technology, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea
School of Advanced Materials Science and Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749, Republic of Korea
References (74)
Show source-provided references
1. Pradhan D. · ACS Appl. Mater. Interfaces · 2009 · 1 · 144410.1021/am9001327 ↗
2. Thomas J. P. · ACS Appl. Mater. Interfaces · 2011 · 3 · 400710.1021/am200867c ↗
3. Sankaran K. J. · ACS Appl. Mater. Interfaces · 2012 · 4 · 416910.1021/am300894u ↗
4. Thomas J. P. · ACS Appl. Mater. Interfaces · 2012 · 4 · 510310.1021/am3016203 ↗
5. Sekaric L. · Appl. Phys. Lett. · 2002 · 81 · 445510.1063/1.1526941 ↗
6. Sumant A. V. · MRS Bull. · 2010 · 35 · 28110.1557/mrs2010.550 ↗
7. Zhou D. D. · Front. Biosci. · 2005 · 10 · 16610.2741/1518 ↗
8. Bergonzo P. · IRBM · 2011 · 32 · 9110.1016/j.irbm.2011.01.032 ↗
9. Ganesan K. · IEEE. Eng. Med. Bio. · 2010 · 6757
10. Li Y. S. · Acs Appl. Mater. Interfaces · 2010 · 2 · 33510.1021/am9007159 ↗
11. Osterlund, L.; Andersson, P. O. ; Karlesson, M; Nikolajeff, F.US 2011/0090484 A1, Apr. 21, 2011.10.1016/S1047-2797(11)00187-6 ↗
12. Andersson P. O. · ChemPhysChem · 2007 · 8 · 71210.1002/cphc.200600691 ↗
13. Andersson P. O. · Surf. Interface Anal. · 2008 · 40 · 62310.1002/sia.2661 ↗
14. Lau K. H. A. · J. Phys. Chem. B · 2004 · 108 · 1081210.1021/jp0498567 ↗
15. Kim D. H. · J. Phys. Chem. B · 2006 · 110 · 1538110.1021/jp0630469 ↗
16. Rong G. G. · Appl. Phys. Lett. · 2008 · 93 · 16110910.1063/1.3005620 ↗
17. De Tommasi E. · Sensors · 2008 · 8 · 654910.3390/s8106549 ↗
18. Cameron P. J. · J. Mater. Chem. · 2008 · 18 · 430410.1039/b805733h ↗
19. Yamaguchi A. · Anal. Chem. · 2009 · 81 · 10510.1021/ac8015642 ↗
20. Hotta K. · Anal. Chem. · 2010 · 82 · 606610.1021/ac100654b ↗
21. Peic A. · J. Phys. Chem. C · 2011 · 115 · 61310.1021/jp109316j ↗
22. Zhang Z. · J. Phys. Chem. C · 2012 · 116 · 334210.1021/jp2102429 ↗
23. Yang W. S. · Nat. Mater. · 2002 · 1 · 25310.1038/nmat779 ↗
24. Szunerits S. · J. Phys. Chem. C · 2010 · 114 · 334610.1021/jp908916y ↗
25. Dai Y. · Anal. Chem. · 2008 · 80 · 1410.1021/ac085996r ↗
26. Kirste A. · Angew. Chem., Int. Ed. · 2010 · 49 · 97110.1002/anie.200904763 ↗
27. Gao Z. · Diamond Relat. Mater. · 2010 · 19 · 102110.1016/j.diamond.2010.03.014 ↗
28. Girard H. A. · ACS Appl. Mater. Interfaces · 2009 · 1 · 273810.1021/am900458g ↗
29. Stehlik S. · ACS Appl. Mater. Interfaces · 2012 · 4 · 386010.1021/am3005829 ↗
30. Wang X. · ACS Appl. Mater. Interfaces · 2012 · 4 · 352610.1021/am300595f ↗
31. Lee, K. S.; Lee, H. J.; Lee, W. S.Int. Meet. Chem. Sens.May 20–23; 2012; pp1490–1491.10.5162/IMCS2012/P2.3.14 ↗
32. Prajzler V. · Opt. Express · 2013 · 21 · 841710.1364/OE.21.008417 ↗
33. Butler J. E. · Chem. Vap. Deposition · 2008 · 14 · 14510.1002/cvde.200700037 ↗
34. You M. S. · Diamond Relat. Mater. · 2009 · 18 · 15510.1016/j.diamond.2008.07.015 ↗
35. Lee H.-J. · J. Phys. Chem. C · 2012 · 116 · 918010.1021/jp2117328 ↗
36. Catledge S. A. · J. Phys. D: Appl. Phys. · 2005 · 38 · 141010.1088/0022-3727/38/9/013 ↗
37. Wild C. · J. Appl. Phys. · 1990 · 68 · 97310.1063/1.346663 ↗
38. Ophus C. · Acta Mater. · 2009 · 57 · 132710.1016/j.actamat.2008.11.014 ↗
39. Yarbrough W. A. · Science · 1990 · 247 · 68810.1126/science.247.4943.688 ↗
40. Ye H. T. · J. Phys. D: Appl. Phys. · 2000 · 33 · L14810.1088/0022-3727/33/23/103 ↗
41. Spitsyn B. V. · J. Cryst. Growth · 1990 · 99 · 116210.1016/S0022-0248(08)80101-7 ↗
42. Chen K. H. · Thin Solid Films · 1998 · 332 · 3410.1016/S0040-6090(98)01023-2 ↗
43. Gruen D. M. · Annu. Rev. Mater. Sci. · 1999 · 29 · 21110.1146/annurev.matsci.29.1.211 ↗
44. May P. W. · J. Phys. Chem. C · 2008 · 112 · 1243210.1021/jp803735a ↗
45. May P. W. · J. Appl. Phys. · 2007 · 101 · 05311510.1063/1.2696363 ↗
46. Stotter J. · Anal. Chem. · 2002 · 74 · 592410.1021/ac0203544 ↗
47. Mermoux M. · J. Phys. Chem. B · 2002 · 106 · 1081610.1021/jp0202946 ↗
48. Singh R. K. · Appl. Phys. Lett. · 1996 · 69 · 218110.1063/1.117158 ↗
49. Joseph P. T. · Diamond Relat. Mater. · 2008 · 17 · 47610.1016/j.diamond.2007.10.013 ↗
50. Remes Z. · Diamond Relat. Mater. · 2010 · 19 · 45310.1016/j.diamond.2010.01.013 ↗
51. Williams O. A. · Phys. Status Solidi A · 2006 · 203 · 337510.1002/pssa.200671406 ↗
52. Gajewski W. · Phys. Rev. B · 2009 · 79 · 04520610.1103/PhysRevB.79.045206 ↗
53. Chen L. C. · J. Appl. Phys. · 2001 · 89 · 75310.1063/1.1327608 ↗
54. Remes Z. · Diamond Relat. Mater. · 2007 · 16 · 67110.1016/j.diamond.2006.11.100 ↗
55. Kromka A. · Chem. Vap. Deposition · 2008 · 14 · 18110.1002/cvde.200706662 ↗
56. Achatz P. · Appl. Phys. Lett. · 2006 · 88 · 10190810.1063/1.2183366 ↗
57. Remes Z. · Phys. Status Solidi A · 2004 · 201 · 249910.1002/pssa.200405174 ↗
58. Griffin J. · Nanotechnology · 2006 · 17 · 122510.1088/0957-4484/17/5/010 ↗
59. Tsugawa K. · J. Phys. Chem. C · 2010 · 114 · 382210.1021/jp910555x ↗
60. Tsugawa K. · Phys. Rev. B · 2010 · 82 · 12546010.1103/PhysRevB.82.125460 ↗
61. Xiao X. · J. Appl. Phys. · 2004 · 96 · 223210.1063/1.1769609 ↗
62. Cullity, B. D.InElements of X-ray Diffraction,2nd ed.Cohen, M., Ed.Addison-Wesley:MA, 1978; p102.
63. Atta N. F. · Int. J. Electrochem. Sci. · 2012 · 7 · 72510.1016/S1452-3981(23)13372-4 ↗
64. O’Leary S. K. · J. Appl. Phys. · 1997 · 82 · 333410.1063/1.365643 ↗
65. Ohring, M.InMaterial Science of Thin Films,1st ed.Academic Press:New York, 1992; pp40–43.10.1016/B978-0-08-051118-4.50007-4 ↗
66. Kulisch W. · Phys. Status Solidi A · 2006 · 203 · 20310.1002/pssa.200521123 ↗
67. Adamson, A. W.InPhysical Chemistry of Surfaces,5th ed.Wiley-Interscience:New York, 1982; pp364–378.
68. Barrett, C. R.; Nix, W. D.; Tetelman, A. S.InThe Principles of Engineering Materials,1st ed.Prince-Hall:New York, 1973; p144–192.
69. Lee S. T. · Phys. Rev. B · 1997 · 55 · 1593710.1103/PhysRevB.55.15937 ↗
70. Konicek A. R. · Phys. Rev. Lett. · 2008 · 100 · 23550210.1103/PhysRevLett.100.235502 ↗
71. Saleh, B. E. A.; Teich, M. C.InGuided-Wave Optics, in Fundamentals of Photonics,1st ed.Goodman, J. W., Eds.John Wiley & Sons.:New York, 1991; p238–271.10.1002/0471213748 ↗
72. Lee K. S. · Appl. Surf. Sci. · 2008 · 254 · 789310.1016/j.apsusc.2008.03.035 ↗
73. Lee K. S. · Appl. Phys. Lett. · 2007 · 91 · 14190510.1063/1.2795338 ↗
74. Fujimaki M. · Nanotechnology · 2008 · 19 · 09550310.1088/0957-4484/19/9/095503 ↗