Band Alignment for Rectification and Tunneling Effects in Al2O3 Atomic-Layer-Deposited on Back Contact for CdTe Solar Cell
Source abstract
Abstract
The present work intends to explain why ultrathin Al 2 O 3 atomic-layer-deposited (ALD) on the back contact with rectification and tunneling effects can significantly improve the performance of CdTe solar cells in our previous work [ Liang, J.; et al. Appl. Phys. Lett. 2015, 107, 013907]. Herein, we further study the mechanism through establishing the interfacial energy band diagram configuration of the ALD Al 2 O 3 /Cu x Te by experiment of X-ray photoelectron spectroscopy and first-principles calculations and conclude to find the band alignment with optimized layer thickness (about 1 nm ALD Al 2 O 3 ) as the key factor for rectification and tunneling effects.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Silicon and Solar Cell Technologies · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Advanced Materials, Peking University, Peking University Shenzhen Graduate School, Shenzhen 518055, China
Funding
National Natural Science Foundation of China · Shenzhen Science and Technology Innovation Committee · Guangdong Province · Natural Science Foundation of Guangdong Province
References (39)
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