journal article·2017-02

Sub-micron-sized delafossite CuCrO2 with different morphologies synthesized by nitrate–citric acid sol–gel route

SATISH BOLLOJU, RADHAKRISHNAN SRINIVASAN

Bulletin of Materials Science· Volume 40· Issue 1
Publisher page

Abstract

Currently, copper chromium oxide crystallizing in delafossite structure attracts huge research interest due to its versatile applications arising from its layered structure. In this work, delafossite CuCrO2 was synthesized by sol–gel method from their respective hydrated nitrate salts with citric acid as a chelating agent. The phase formation temperature was found to be between 750 and 775∘C. At 750∘C, the partial formation of delafossite CuCrO2 spheres with particle size in nano-regime was observed in the midst of platelets of spinel CuCr2O4. A green coloured powder with particle size 125–350 nm exhibiting distorted spheres was obtained at 775∘C. The increase in temperature has a profound impact on the particle size, morphology and the optical properties of CuCrO2. The X-ray powder diffraction studies revealed the formation of 3R-CuCrO2 phase (rhombohedral, space group R-3m) as a major product in the temperature range 775–1000∘C. The unit cell parameters were found to be a = b = 2.9711 A and c = 17.0723 A at 1000∘C. Scanning electron micrographs illustrated the different morphologies from spheres to hexagonal form via distorted spheres and cubes. The UV–Vis diffuse reflectance spectra measured for the powders exhibited semiconductor characteristics with an interesting size-related and temperature-dependent bandgap.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (37)

Show source-provided references
1. Marquardt M A, Ashmore N A and Cann D P 2006 Thin Solid Films 496 14610.1016/j.tsf.2005.08.316 ↗
2. Amrute A P, Larrazabal G O, Mondelli C and Ramirez J P 2013 Angew. Chem. Int. Ed. 52 977210.1002/anie.201304254 ↗
3. Zhou S, Fang X, Deng Z, Li D, Dong W, Tao R, Meng G and Wang T 2009 Sensor Actuat. B 143 11910.1016/j.snb.2009.09.026 ↗
4. Kameoka S, Okada M and Tsai A P 2008 Catal. Lett. 120 25210.1007/s10562-007-9277-4 ↗
5. Meng Q, Lu S, Lu S and Xiang Y 2012 J. Sol–Gel Sci. Technol. 63 110.1007/s10971-012-2732-8 ↗
6. Powar S, Xiong D, Daeneke T, Ma M T, Gupta A, Lee G, Makuta S, Tachibana Y, Chen W, Spiccia L, Cheng Y B, Goetz G, Baeuerle P and Bach U 2014 J. Phys. Chem. C 118 1637510.1021/jp409363u ↗
7. Xiong D, Zhang W, Zeng X, Xu Z, Chen W, Cui J, Wang M, Sun L and Cheng Y B 2013 ChemSusChem 6 143210.1002/cssc.201300265 ↗
8. Shannon R D, Rogers D B and Prewitt C T 1971 Inorg. Chem. 10 71310.1021/ic50098a011 ↗
9. Ketir W, Saadi S and Trari M 2012 J. Solid State Eletrochem. 16 21310.1007/s10008-011-1307-x ↗
10. Amrute A P, Lodziana Z, Mondelli C, Krumeich F and Ramirez J P 2014 Chem. Mater. 25 442310.1021/cm402902m ↗
11. Sheets W C, Mugnier E, Barnabe A, Marks T J and Poeppelmeier K R 2006 Chem. Mater. 18 710.1021/cm051791c ↗
12. Zhou S, Fang X, Deng Z, Li D, Dong W, Tao R, Meng G, Wang T and Zhu X 2008 J. Cryst. Growth 310 537510.1016/j.jcrysgro.2008.09.193 ↗
13. Miclau M, Ursu D, Kumar S and Grozescu I 2012 J. Nanopart. Res. 14 111010.1007/s11051-012-1110-3 ↗
14. Chiu T W, Yu B S, Wang Y R, Chen K T and Lin Y T 2011 J. Alloys Compd. 509 293310.1016/j.jallcom.2010.11.162 ↗
15. Deng Z, Zhu X, Tao R, Dong W and Fang X 2007 Mater. Lett. 61 68610.1016/j.matlet.2006.05.042 ↗
16. Kumar S, Marinela S, Miclau M and Martin C 2012 Mater. Lett. 70 4010.1016/j.matlet.2011.11.091 ↗
17. Okuda T, Jufuku N, Hidaka S and Terada N 2005 Phy. Rev. B 72 144403(1)10.1103/PhysRevB.72.144403 ↗
18. Poienar M, Hardy V, Kundys B, Singh K, Maignan A, Damay F and Martin C 2012 J. Solid State Chem. 185 5610.1016/j.jssc.2011.10.047 ↗
19. Goetzendoerfer S, Polenzky C, Ulrich S and Loebmann P 2009 Thin Solid Films 518 115310.1016/j.tsf.2009.02.153 ↗
20. Kawazoe H, Yasukawa M, Hyodo H, Kurita M, Yanagi H and Hosono H 1997 Nature 389 93910.1038/40087 ↗
21. Nagarajan R, Draeske A D, Sleight A W and Tate J 2001 J. Appl. Phys. 89 802210.1063/1.1372636 ↗
22. Benko F A and Koffyberg F P 1986 Mater. Res. Bull. 21 75310.1016/0025-5408(86)90156-X ↗
23. Mahapatra S and Shivasankar S A 2003 Chem. Vap. Deposition 9 23810.1002/cvde.200304147 ↗
24. Li D, Fang X D, Deng Z H, Zhou S, Tao R H, Dong W W, Wang T, Zhao Y P, Meng G and Zhu X B 2007 J. Phys. D : Appl. Phys. 40 491010.1088/0022-3727/40/16/023 ↗
25. Scanlon D O and Watson G W 2011 J. Mater. Chem. 21 365510.1039/c0jm03852k ↗
26. Bywalez R, Goetzendoerfer S and Loebmann P 2010 J. Mater. Chem. 20 656210.1039/b926424h ↗
27. Li D, Fang X, Zhao A, Deng Z, Dong W and Tao R 2010 Vacuum 84 85110.1016/j.vacuum.2009.11.014 ↗
28. Xiong D, Zeng X, Zhang W, Chen W, Xu X, Wang M and Cheng Y B 2012 J. Mater. Chem. 22 2476010.1039/c2jm35101c ↗
29. Ursu D and Miclau M 2014 J. Nanopart. Res. 16 216010.1007/s11051-013-2160-x ↗
30. Srinivasan R, Chavillon B, Dossier-Brochard C, Cario L, Paris M, Gautron E, Deniard P, Odobel F and Jobic S 2008 J. Mater. Chem. 18 564710.1039/b810064k ↗
31. Chavillon B, Cario L, Dossier-Brochard C, Srinivasan R, Le Pleux L, Pellegrin Y, Blart E, Odobel F and Jobic S 2010 Phys. Status Solidi A 207 164210.1002/pssa.200983764 ↗
32. Goetzendoerfer S, Bywalez R and Loebmann P 2009 J. Sol–Gel Sci. Technol. 52 11310.1007/s10971-009-1989-z ↗
33. Ahmad A, Jagadale T, Dhas V, Khan S, Patil S, Pasricha R, Ravi V and Ogale S B 2007 Adv. Mater. 19 329510.1002/adma.200602605 ↗
34. Srinivasan R and Bolloju S 2014 AIP Conf. Proc. 1576 20510.1063/1.4862021 ↗
35. Singh K A and Pathak L C 2007 Ceram. Int. 33 146310.1016/j.ceramint.2006.05.021 ↗
36. Saadi S, Bouguelia A and Trari M 2006 Sol. Energy 80 27210.1016/j.solener.2005.02.018 ↗
37. Zeghbroeck B V 2011 Principle of semiconductor devices, http://ecee. colorado.edu/~bart/book/book/contents.htm (University of Colorado)