Bonding Mechanisms of BTO-NZF Laminated Cofired Bodies Featuring High-Quality Heterojunctions
Source abstract
Abstract
The shrinkage rate of Ni 0.6 Zn 0.4 Fe 1.8 O 4 (NZF) ferrite was controlled to enable cofiring with BaTiO 3 (BTO) at 1250 °C, forming BTO-NZF laminated structures. Postcofiring microstructural analysis revealed a well-bonded interface with minimal elemental interdiffusion. Notably, Ti 4+ exhibited the highest diffusion coefficient (1.60 ± 0.05 × 10 –12 cm 2 /s). Unidentified phases on the NZF side effectively restricted Ba 2+ and Ti 4+ diffusion. The BTO-NZF heterojunction consisted primarily of nanoscale amorphous layers containing Ba 2+ and coherent crystalline regions. The dense amorphous barrier layer not only ensured strong interfacial bonding but also significantly suppressed interdiffusion. High-quality heterojunction formation was influenced by four primary factors, including the presence of similar ionic radii and interplanar spacings, amorphous barrier layers, and a certain concentration of large-radius ions. Magnetic characterization showed that NZF had a saturation magnetization ( M s ) of 70.29 ± 0.50 emu/g, a coercivity ( H c ) of 8.89 ± 0.50 Oe, and a remanent magnetization ( M r ) of 1.01 emu/g. The relative dielectric constant (ε r ) of BTO ranged from 1490 to 2500 (at 1 MHz), while the dielectric loss tangent (tanδ) varied between 4 × 10 –3 and 1.25 × 10 –2 . These findings offer valuable guidance for selecting cofired laminated substrates and designing high-performance heterojunctions. Moreover, the resulting cofired laminates exhibit excellent electromagnetic properties, demonstrating strong potential for magnetoelectric coupling applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Multiferroics and related materials · Ferroelectric and Piezoelectric Materials · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE
Huazhong University of Science and Technology
Advanced Manufacturing Institute of Huazhong University of Science and Technology in Wenzhou
Zhejiang Key Laboratory of Electronic Functional Ceramics and Devices
Funding
National Key Research and Development Program of China
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