journal article·2025-08-20

Anisotropic and Controllable Nonlocal Damping in Exchange Bias Bilayers

Mei Du, Zhe Li, Chunmei Wang, Yanchen Luo, Rongpei Shi, Chris Van Haesendonck, Qinghai Song, Haoliang Liu

ACS Applied Materials & Interfaces· Volume 17· Issue 33
Publisher page

Abstract

The physics at antiferromagnetic (AFM)/ferromagnetic (FM) interfaces, including exchange bias (EB) and spin current, are of key interest in spintronics. However, the relationship between the EB effect and spin current is still controversial. Here, we have observed anisotropic and controllable nonlocal damping in a typical EB system, i.e., Co/CoO bilayers. Oblique deposition of Co film with an in situ oxidized CoO top layer generates a controllable uniaxial magnetic anisotropy (UMA), and leads to reconfigurable orientations of the average interfacial uncompensated AFM spins. The Gilbert damping constant is larger in the hard axis than in the easy axis of UMA, which can be further enhanced by the training effect because of the reorientation of the average uncompensated AFM spins. Our work provides insight into the effect of EB on nonlocal damping and paves a new way to control the spin current in AFM spintronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems

Harbin Institute of Technology (Shenzhen)

Quantum Solid State Physics (QSP), Department of Physics and Astronomy

KU Leuven

School of Materials Science and Engineering

State Key Laboratory of Luminescent Materials and Devices

South China University of Technology (SCUT)

Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area, Shenzhen-Hong Kong International Science and Technology ParkNO.3 Binglang Road, Futian District, Shenzhen 518000, China

Heilongjiang Provincial Key Laboratory of Advanced Quantum Functional Materials and Sensor devices

Funding

National Key Research and Development Program of China · Basic and Applied Basic Research Foundation of Guangdong Province · Science, Technology and Innovation Commission of Shenzhen Municipality · State Key Laboratory of Luminescent Materials and Devices · National Natural Science Foundation of China

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