journal article·2024-07-31

Manipulation of Helicity-Dependent Photocurrent and Stokes Parameter Detection in Topological Insulator Bi2Te3 Nanowires

Qin Yu, Shizun Feng, Jinling Yu, Shuying Cheng, Yunfeng Lai, Yonghai Chen, Ke He

ACS Applied Materials & Interfaces· Volume 16· Issue 30
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Abstract

Helicity-dependent photocurrent (HDPC) and its modulation in topological insulator Bi 2 Te 3 nanowires have been investigated. It is revealed that when the incident plane of a laser is perpendicular to the nanowire, the HDPC is an odd function of the incident angle, which is mainly contributed by the circular photogalvanic effect originating from the surface states of Bi 2 Te 3 nanowire. When the incident plane of a laser is parallel to the nanowire, the HDPC is approximately an even function of the incident angle, which is due to the circular photon drag effect coming from the surface states. It is found that the HDPC can be effectively tuned by the back gate and the ionic liquid top gate. By analyzing the substrate dependence of the HDPC, we find that the HDPC of the Bi 2 Te 3 nanowire on the Si substrate is an order of magnitude larger than that on SiO 2, which may be due to the spin injection from the Si substrate to the Bi 2 Te 3 nanowire. In addition, by applying different biases, the Stokes parameters of a polarized light can be extracted by arithmetic operation of the photocurrents measured in the Bi 2 Te 3 nanowire. This work suggests that topological insulator Bi 2 Te 3 nanowires may provide a good platform for opto-spintronic devices, especially in chirality and polarimtry detection.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, Fujian, China

Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, China

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China

Funding

State Key Laboratory of Low-Dimensional Quantum Physics · National Key Research and Development Program of China · National Natural Science Foundation of China · Fujian Provincial Department of Industry and Information Technology · Fujian Province

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