Field-Driven Solid-State Defect Control of Bilayer Switching Devices

We develop a framework for controlling and investigating reversible ionic transfer between two solid metal oxides layers by examining field-driven changes in electrical properties of the thin film bilayer oxide system Pr 0.1 Ce 0.9 O 2 /La 1.85 Ce 0.15 CuO 4 (PCO/LCCO). We show that we can reversibly redistribute oxygen ions by applied voltage in a highly controlled and reversible fashion near ambient temperatures over large oxygen ion activity limits, which, for the first time, is directly interpretable by defect chemical models. This allowed us to determine how defect concentrations in each layer systematically varied with voltage and the subsequent impact on each film’s conductance. These results showcase the relevance and applicability of defect chemical models, traditionally considered only at elevated temperatures, to the development of bilayer devices of importance to neuromorphic memory applications. This allows for a more systematic approach for studying and understanding the solid–solid exchange process in electrochemically controlled microelectronic devices. Moreover, our work sets the foundation for the development of large-area field-driven defect-controlled bilayer switching devices with potential application to a broad array of functionally modulated devices.