journal article·2024-02-28

Greatly Improved the Tunable Amplitude of Ferromagnetism Based on Interface Effect of Flexible Pt/YIG Heterojunctions

Yanan Zhao, Yufei Yao, Yafang Chai, Zicong Zhou, Yaojin Li, Yunting Guo, Qi Lu, Haixia Liu, Guannan Yang, Guohua Dong, Bin Peng, Zhongqiang Hu, Ming Liu

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Abstract

Flexible quantum spin electronic devices based on ferromagnetic insulators have attracted wide attention due to their outstanding advantages of low-power dissipation and noncontact sensing. However, ferromagnetic insulators, such as monocrystalline yttrium iron garnet (Y 3 Fe 5 O 12, YIG), hve weak stress effects with a small magnetostrictive coefficient (λ 110, 10 ppm), making it difficult to achieve a large magnetic tunable amplitude. In this paper, large-scale (with a diameter of 40 mm), flexible Pt/YIG heterojunctions were obtained by double-cavity magnetron sputtering technology, indicating typical soft magnetism and good bending fatigue characteristics. Here, the 3 nm thickness of the Pt layer triggers an obvious magnetic proximity effect, in which the in-plane ferromagnetic resonance field is decreased by 70 Oe compared to flexible Cu/YIG heterojunctions. Meanwhile, it shows a wide tunable amplitude of 110 Oe under the flexible bending stresses, which is induced by the sensitive interface effect of Pt (3 nm)/YIG heterojunctions. The saturation magnetization of Pt/YIG heterojunctions is negatively correlated with Pt thickness rather than the relative stability of Cu/YIG heterojunctions, depending on the magnetic proximity effect. It brings greater application possibilities for flexible stress-sensitive magnetic oxides in spin logic electronic devices.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Magneto-Optical Properties and Applications · ZnO doping and properties · Advanced Sensor and Energy Harvesting Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi’an Jiaotong University, Xi’an 710049, China

Department of Physics, School of Science, Lanzhou University of Technology, Lanzhou 730050, China

Funding

National Key Research and Development Program of China · China Postdoctoral Science Foundation · Fundamental Research Funds for the Central Universities · National Natural Science Foundation of China · Higher Education Discipline Innovation Project

References (31)

Show source-provided references
1. 10.1038/nmat283510.1038/nmat2835 ↗
2. 10.1002/adma.20140063310.1002/adma.201400633 ↗
3. 10.1002/adma.20130424810.1002/adma.201304248 ↗
4. 10.1002/adfm.20130387410.1002/adfm.201303874 ↗
5. 10.1126/science.118238310.1126/science.1182383 ↗
6. 10.1126/science.120615710.1126/science.1206157 ↗
7. 10.1038/ncomms674710.1038/ncomms6747 ↗
8. 10.1063/1.493693410.1063/1.4936934 ↗
9. 10.1002/aelm.20170052210.1002/aelm.201700522 ↗
10. 10.1021/acsnano.7b0263710.1021/acsnano.7b02637 ↗
11. 10.1021/acsami.8b0998410.1021/acsami.8b09984 ↗
12. 10.1021/acsami.8b1295410.1021/acsami.8b12954 ↗
13. 10.1021/acsami.9b0487710.1021/acsami.9b04877 ↗
14. 10.1002/admt.20190057810.1002/admt.201900578 ↗
15. 10.1021/acsami.8b2142110.1021/acsami.8b21421 ↗
16. 10.1049/el:1971006210.1049/el:19710062 ↗
17. 10.1038/nphys332510.1038/nphys3325 ↗
18. 10.1088/1361-6463/abce7c10.1088/1361-6463/abce7c ↗
19. 10.1039/C9MH01782H10.1039/C9MH01782H ↗
20. 10.1063/5.001826110.1063/5.0018261 ↗
21. 10.1002/adma.20160291010.1002/adma.201602910 ↗
22. 10.1039/C9NR08810E10.1039/C9NR08810E ↗
23. 10.1109/LMWC.2013.229292410.1109/LMWC.2013.2292924 ↗
24. 10.1002/adma.20080337610.1002/adma.200803376 ↗
25. 10.1002/adfm.20180559210.1002/adfm.201805592 ↗
26. 10.1039/C6RA17910J10.1039/C6RA17910J ↗
27. 10.1002/adma.20180290210.1002/adma.201802902 ↗
28. 10.1063/1.497346010.1063/1.4973460 ↗
29. 10.1103/PhysRev.73.15510.1103/PhysRev.73.155 ↗
30. 10.1103/PhysRevB.70.06441610.1103/PhysRevB.70.064416 ↗
31. 10.1088/0034-4885/61/7/00110.1088/0034-4885/61/7/001 ↗