journal article·2022-03-16

Spin Engineering of VO2 Phase Transitions and Removal of Structural Transition

Adele Moatti, Gabrielle Mineo-Foley, Siddharth Gupta, Ritesh Sachan, Jay Narayan

ACS Applied Materials & Interfaces· Volume 14· Issue 10
Publisher page

Abstract

Vanadium dioxide undergoes a metal-to-insulator transition, where the energy of electron–electron, electron–lattice, spin–spin, and spin–lattice interactions are of the same order of magnitude. This leads to the coexistence of electronic and structural transitions in VO2 that limit the lifetime and speed of VO2-based devices. However, the closeness of interaction energy of lattice-electron-spin can be turned into an opportunity to induce some transitions while pinning others via external stimuli. That is, the contribution of spin, charge, orbital, and lattice degrees of freedom can be manipulated. In this study, spin engineering has been exploited to affect the spin-related interactions in VO2 by introducing a ferromagnetic Ni layer. The coercivity in the Ni layer is engineered by controlling the shape anisotropy via kinetics of growth. Using spin engineering, the structural pinning of the monoclinic M2 phase of VO2 is successfully achieved, while the electronic and magnetic transitions take place.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing · Gas Sensing Nanomaterials and Sensors

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

North Carolina State University, Materials Science and Engineering Department, Raleigh, North Carolina 27695, United States

Oklahoma State University, Mechanical and Aerospace Engineering, Stillwater, Oklahoma 74078, United States

Funding

Division of Materials Research

References (46)

Show source-provided references
1. 10.1016/0022-4596(71)90091-010.1016/0022-4596(71)90091-0 ↗
2. 10.1038/s41598-019-39529-z10.1038/s41598-019-39529-z ↗
3. Ramanathan, S. Thin Film Metal-Oxides; Harvard University: Springer: New York Dordrecht Heidelberg London, 2010; pp 51–94.10.1007/978-1-4419-0664-9 ↗
4. 10.1103/PhysRevB.11.438310.1103/PhysRevB.11.4383 ↗
5. 10.1039/c3nr02210b10.1039/c3nr02210b ↗
6. 10.1080/10408436.2012.71913110.1080/10408436.2012.719131 ↗
7. 10.1109/JPROC.2015.243191410.1109/JPROC.2015.2431914 ↗
8. 10.1021/acsami.8b1787910.1021/acsami.8b17879 ↗
9. 10.1021/acsami.7b0562010.1021/acsami.7b05620 ↗
10. 10.1039/c7tc05768g10.1039/c7tc05768g ↗
11. 10.1126/science.aam918910.1126/science.aam9189 ↗
12. 10.1038/ncomms849710.1038/ncomms8497 ↗
13. 10.1103/PhysRevLett.109.16640610.1103/PhysRevLett.109.166406 ↗
14. 10.1557/jmr.2014.25310.1557/jmr.2014.253 ↗
15. 10.1063/1.479829310.1063/1.4798293 ↗
16. 10.1103/PhysRevB.96.09430910.1103/PhysRevB.96.094309 ↗
17. 10.1109/LMAG.2016.260562510.1109/LMAG.2016.2605625 ↗
18. 10.1063/1.34153010.1063/1.341530 ↗
19. 10.1088/0953-8984/16/20/R0110.1088/0953-8984/16/20/R01 ↗
20. 10.1016/S0921-4526(99)01939-010.1016/S0921-4526(99)01939-0 ↗
21. 10.1088/0256-307X/29/12/12750110.1088/0256-307X/29/12/127501 ↗
22. 10.1017/CBO978051162252610.1017/CBO9780511622526 ↗
23. 10.1017/CBO978051175565110.1017/CBO9780511755651 ↗
24. 10.1007/978-3-662-05179-510.1007/978-3-662-05179-5 ↗
25. 10.1103/PhysRevB.91.24515510.1103/PhysRevB.91.245155 ↗
26. 10.1103/PhysRevB.85.02010110.1103/PhysRevB.85.020101 ↗
27. 10.1103/PhysRevB.77.23511110.1103/PhysRevB.77.235111 ↗
28. 10.1016/j.physc.2007.03.35610.1016/j.physc.2007.03.356 ↗
29. 10.1039/C6RA09449J10.1039/C6RA09449J ↗
30. 10.1016/S0921-4526(02)00584-710.1016/S0921-4526(02)00584-7 ↗
31. 10.1002/jrs.561610.1002/jrs.5616 ↗
32. 10.1038/s41598-020-58813-x10.1038/s41598-020-58813-x ↗
33. 10.1021/nl903765h10.1021/nl903765h ↗
34. 10.1016/j.actamat.2018.12.04110.1016/j.actamat.2018.12.041 ↗
35. 10.1209/0295-5075/109/2700410.1209/0295-5075/109/27004 ↗
36. 10.1088/0957-4484/24/34/34570110.1088/0957-4484/24/34/345701 ↗
37. 10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO;2-K10.1002/1521-3889(200210)11:9<650::AID-ANDP650>3.0.CO;2-K ↗
38. 10.5772/3949410.5772/39494 ↗
39. 10.1063/1.479829310.1063/1.4798293 ↗
40. 10.1063/1.486558710.1063/1.4865587 ↗
41. 10.1007/s10854-017-8178-610.1007/s10854-017-8178-6 ↗
42. 10.1557/adv.2016.39710.1557/adv.2016.397 ↗
43. 10.1021/cm100571v10.1021/cm100571v ↗
44. 10.1016/j.actamat.2019.01.05210.1016/j.actamat.2019.01.052 ↗
45. 10.1002/jemt.2313010.1002/jemt.23130 ↗
46. 10.1557/adv.2016.46310.1557/adv.2016.463 ↗