Long-Term Degradation Mechanisms in Application-Implemented Radical Thin Films
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Blatter radical derivatives are very attractive due to their potential applications, ranging from batteries to quantum technologies. In this work, we focus on the latest insights regarding the fundamental mechanisms of radical thin film (long-term) degradation, by comparing two Blatter radical derivatives. We find that the interaction with different contaminants (such as atomic H, Ar, N, and O and molecular H 2, N 2, O 2, H 2 O, and NH 2 ) affects the chemical and magnetic properties of the thin films upon air exposure. Also, the radical-specific site, where the contaminant interaction takes place, plays a role. Atomic H and NH 2 are detrimental to the magnetic properties of Blatter radicals, while the presence of molecular water influences more specifically the magnetic properties of the diradical thin films, and it is believed to be the major cause of the shorter diradical thin film lifetime in air.
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Research context
OpenAlex topics: Magnetism in coordination complexes · Organic and Molecular Conductors Research · Molecular Junctions and Nanostructures
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physical and Theoretical Chemistry, University of Tübingen, 72076 Tübingen, Germany
Institute Methods and Instrumentation for Synchrotron Radiation Research, Helmholtz-Zentrum Berlin, 12489 Berlin, Germany
Department of Chemistry, University of Nebraska, Lincoln, Nebraska 68588, United States
CNR-NANO Istituto Nanoscienze, Centro S3, 41125 Modena, Italy
Funding
Helmholtz-Zentrum Berlin f?r Materialien und Energie · Deutsche Forschungsgemeinschaft · Horizon 2020 Framework Programme · National Science Foundation
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