journal article·2013-05-08

Structural Investigation of Cr(Al)N/SiOx Films Prepared on Si Substrates by Differential Pumping Cosputtering

Masahiro Kawasaki, Hiroshi Takabatake, Ichiro Onishi, Masateru Nose, Makoto Shiojiri

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Abstract

Analytical electron microscopy revealed the structure and growth of hard coating Cr(Al)N/SiOx nanocomposite films prepared in a differential pumping cosputtering (DPCS) system, which has two chambers to sputter different materials and a rotating substrate holder. The substrate holder was heated at 250 °C and rotated at a speed as low as 1 rpm. In order to promote the adhesion between the substrate and composite film, transition layers were deposited on a (001) Si substrate by sputtering from the CrAl target with an Ar flow and a mixture flow of Ar and N2 (Ar/N2) gases, subsequently, prior to the composite film deposition. Then, the Cr(Al)N/SiOx nanocomposite film was fabricated on the transition layers by cosputtering from the CrAl target with the Ar/N2 gas flow and from the SiO2 target with the Ar gas flow. The film had a multilayer structure of ∼1.6 nm thick crystallite layers of Cr(Al)N similar to NaCl-type CrN and ∼1 nm thick amorphous silicon oxide layers. The structure of the transition layers was also elucidated. These results can help with the fabrication of new hard nanocomposite films by DPCS.
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Research context

OpenAlex topics: Metal and Thin Film Mechanics · Semiconductor materials and devices · Diamond and Carbon-based Materials Research

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

JEOL USA Inc., 11 Dearborn Road, Peabody, Massachusetts 01960, United States

School of Science and Engineering, University of Toyama, Toyama 930-8555, Japan

JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

Faculty of Art and Design, University of Toyama, Takaoka 933-8588, Japan

Kyoto Institute of Technology, Kyoto 606-8585, Japan

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