journal article·2014-08-27Open access

Influence of Gas Ambient on Charge Writing at the LaAlO3/SrTiO3 Heterointerface

Haeri Kim, Seon Young Moon, Shin-Ik Kim, Seung-Hyub Baek, Ho Won Jang, Dong-Wook Kim

Abstract

We investigated the influences of charge writing on the surface work function (W) and sheet resistance (R) of the LaAlO3/SrTiO3 (LAO/STO) heterointerface in several gas environments: H2(2%)/N2(98%), air, N2, and O2. The decrease in W and R due to charge writing was much larger in air (ΔW = -0.45 eV and ΔR = -40 kΩ/S) than in O2 (ΔW = -0.21 eV and ΔR = -19 kΩ/S). The reduced R could be maintained more than 100 h in H2/N2. Such distinct behaviors were quantitatively discussed, based on the proposed charge-writing mechanisms. Such analyses showed how several processes, such as carrier transfer via surface adsorbates, surface redox, electronic state modification, and electrochemical surface reactions, contributed to charge writing in each gas.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Semiconductor materials and devices · Advancements in Solid Oxide Fuel Cells

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Physics, Ewha Womans University, Seoul 120-750, Republic of Korea

Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea

Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea

Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-742, Republic of Korea

Funding

National Research Foundation of Korea · Korea Institute of Science and Technology

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