Source abstract
Abstract
Omnidirectional broadband terahertz (THz) antireflection (AR) with an actively configurable coating promises the achievement of next-generation efficient and versatile THz components with high performance. We demonstrate a near-infrared (NIR) light-tunable and omnidirectional broadband THz AR coating based on an impedance matching method and composed of a poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS)/graphene composite film. The omnidirectional broadband properties of the active AR coating can be efficiently achieved by tunable NIR optical excitation of less than 0.27 W·cm–2, which exhibits omnidirectional suppression of THz-wave reflection for incidence angles from 0 to 70°, concerning the broadband frequency range of 0.1–3.0 THz, with an ultrafast response time of ∼5 ps. Furthermore, we demonstrate that the active AR coating can improve the performance of a reflectance-tunable THz-wave polarization reflector by the elimination of Fabry–Pérot interference. The NIR irradiance-dependent active AR mechanism of the hybrid system is investigated, which demonstrates the essential role of the PEDOT:PSS/graphene layers in promoting the charge separation at the interface and therefore changing the photoconductivity of the composite film to achieve impedance matching under optical excitation. Several crucial advantages of the proposed and proven concept, including the wide-angle range, broad spectral range, flexible tunability, and easier fabrication, may revolutionize the AR strategy at THz frequencies for a wide range of THz applications.
Source: openalex_inverted_index · Quality: baseline
Affiliations
National Engineering Laboratory of Special Display Technology, National Key Laboratory of Advanced Display Technology, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, P. R. China
Department of Physics and Zhejiang Province Key Laboratory of Quantum Technology and Devices, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
I. Physikalisches Institut and Center for Materials Research, Justus-Liebig-Universität Gießen, 35392 Gießen, Germany
Funding
Deutsche Forschungsgemeinschaft · Central University Basic Research Fund of China · Chinesisch-Deutsche Zentrum f?r Wissenschaftsf?rderung · National Natural Science Foundation of China · Natural Science Foundation of Anhui Province