Oxygen Vacancy Dynamics at Room Temperature in Oxide Heterostructures
Source abstract
Abstract
Oxygen vacancy dynamic behavior at room temperature in complex oxides was carefully explored by using a combined approach of ion liquid gating technique and resistance measurements. Heterostructures of PrBaCo 2 O 5+δ /Gd 2 O 3 -doped CeO 2 epitaxial thin films were fabricated on (001) Y 2 O 3 -stabilized ZrO 2 single crystal substrates for systematically investigating the oxygen redox dynamics. The oxygen dynamic changes as response to the gating voltage and duration were precisely detected by in situ resistance measurements. A reversible and nonvolatile resistive switching dynamics was detected at room temperature under the gating voltage >13.5 V with pulse duration >1 s.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Electronic and Structural Properties of Oxides · Transition Metal Oxide Nanomaterials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, P. R. China
Institute for Advanced Materials, Jiangsu University, Zhenjiang 212013, P. R. China
Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States
Funding
Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China
References (31)
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