Low-Temperature Charging Dynamics of the Ionic Liquid and Its Gating Effect on FeSe0.5Te0.5 Superconducting Films
Source abstract
Abstract
Ionic liquids (ILs) have been investigated extensively because of their unique ability to form the electric double layer (EDL), which induces high electrical field. For certain materials, low-temperature IL charging is needed to limit the electrochemical etching. Here, we report our investigation of the low-temperature charging dynamics in two widely used ILs—DEME-TF2N and C4mim-TF2N. Results show that the formation of the EDL at ∼220 K requires several hours relative to milliseconds at room temperature, and an equivalent voltage Ve is introduced as a measure of the EDL formation during the biasing process. The experimental observation is supported by molecular dynamics simulation, which shows that the dynamics are logically a function of gate voltage, time, and temperature. To demonstrate the importance of understanding the charging dynamics, a 140 nm thick FeSe0.5Te0.5 film was biased using the DEME IL, showing a tunable Tc between 18 and 35 K. Notably, this is the first observation of the tunability of the Tc in thick film FeSe0.5Te0.5 superconductors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Iron-based superconductors research · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
State Key Laboratory of Coal Combustion, School of Energy and Power Engineering, Huazhong University of Science and Technology (HUST), Wuhan 430074, China
Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, United States
Shenzhen Research Institute of Huazhong University of Science and Technology, Shenzhen 518057, China
Funding
Oak Ridge National Laboratory · Basic Energy Sciences · U.S. Department of Energy · National Natural Science Foundation of China · National Science Foundation · Shenzhen Basic Research Project
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