Tunnel Conduction in Epitaxial Bilayers of Ferromagnetic LaCoO3/La2/3Sr1/3MnO3 Deposited by a Chemical Solution Method
Source abstract
Abstract
We report magnetic and electronic transport measurements across epitaxial bilayers of ferromagnetic insulator LaCoO3 and half-metallic ferromagnet La2/3Sr1/3MnO3 (LCO/LSMO: 3.5 nm/20 nm) fabricated by a chemical solution method. The I-V curves at room temperature and 4K measured with conducting atomic force microscopy (CAFM) on well-defined patterned areas exhibit the typical features of a tunneling process. The curves have been fitted to the Simmons model to determine the height (φ) and width (s) of the insulating LCO barrier. The results yield φ = 0.40 ± 0.05 eV (0.50 ± 0.01 eV) at room temperature (4K) and s = 3 nm, in good agreement with the structural analysis. Our results demonstrate that this chemical method is able to produce epitaxial heterostructures with the quality required for this type of fundamental studies and applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Fundación ARAID, 50018 Zaragoza, Spain
Departmento Física de la Materia Condensada, Universidad de Zaragoza, Pedro Cerbuna 12, 50009 Zaragoza, Spain
Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza, Mariano Esquillor, Edificio I+D, 50018 Zaragoza, Spain
Centro de Investigación en Química Biológica y Materiales Moleculares (CIQUS), Universidad de Santiago de Compostela, 15782 Santiago de Compostela, Spain
Funding
European Research Council · Ministerio de Economía y Competitividad · Xunta de Galicia · Fundación Agencia Aragonesa para la Investigación y Desarrollo · Ministerio de Ciencia · Gobierno de Aragón · European Regional Development Fund
References (37)
Show source-provided references
1. Park J. H. · Nature · 1998 · 392 · 79410.1038/33883 ↗
2. Owen M. · Appl. Phys. Lett. · 2003 · 82 · 23310.1063/1.1534619 ↗
3. Bibes M. · IEEE Trans. Electron Devices · 2007 · 54 · 100310.1109/TED.2007.894366 ↗
4. Opel M. · J. Phys. D: Appl. Phys. · 2012 · 45 · 03300110.1088/0022-3727/45/3/033001 ↗
5. Bibes M. · Adv. Phys. · 2011 · 60 · 510.1080/00018732.2010.534865 ↗
6. Hueso L. E. · Nature · 2007 · 445 · 41010.1038/nature05507 ↗
7. Luders U. · Appl. Phys. Lett. · 2006 · 88 · 08250510.1063/1.2172647 ↗
8. Luders U. · Adv. Mater. · 2006 · 18 · 173310.1002/adma.200500972 ↗
9. Chapline M. G. · Phys. Rev. B · 2006 · 74 · 01441810.1103/PhysRevB.74.014418 ↗
10. Ramos A. V. · Appl. Phys. Lett. · 2007 · 91 · 12210710.1063/1.2787880 ↗
11. Foerster M. · J. Phys. D: Appl. Phys. · 2010 · 43 · 29500110.1088/0022-3727/43/29/295001 ↗
12. Chen Y. F. · Phys. Rev. B · 2007 · 76 · 01442610.1103/PhysRevB.76.014426 ↗
13. Takahashi Y. K. · Appl. Phys. Lett. · 2010 · 96 · 07251210.1063/1.3318297 ↗
14. Biskup N. · Phys. Rev. Lett. · 2014 · 112 · 08720210.1103/PhysRevLett.112.087202 ↗
15. Fuchs D. · Phys. Rev. B · 2008 · 77 · 01443410.1103/PhysRevB.77.014434 ↗
16. Park S. · Appl. Phys. Lett. · 2009 · 95 · 07250810.1063/1.3206667 ↗
17. Sterbinsky G. E. · Phys. Rev. B · 2012 · 85 · 02040310.1103/PhysRevB.85.020403 ↗
18. Hsu H. · Phys. Rev. B · 2012 · 85 · 14040410.1103/PhysRevB.85.140404 ↗
19. Rivadulla F. · Chem. Mater. · 2013 · 25 · 5510.1021/cm3031472 ↗
20. Choi W. S. · Nano Lett. · 2012 · 12 · 496610.1021/nl302562f ↗
21. Kwon J. H. · Chem. Mater. · 2014 · 26 · 249610.1021/cm5003115 ↗
22. Haverkort M. W. · Phys. Rev. Lett. · 2006 · 97 · 17640510.1103/PhysRevLett.97.176405 ↗
23. Yan J. Q. · Phys. Rev. B · 2004 · 69 · 13440910.1103/PhysRevB.69.134409 ↗
24. Goodenough J. B. · Prog. Solid State Chem. · 1971 · 5 · 14510.1016/0079-6786(71)90018-5 ↗
25. Cobas R. · Appl. Phys. Lett. · 2011 · 99 · 08311310.1063/1.3629993 ↗
26. Jia Q. X. · Nat. Mater. · 2004 · 3 · 52910.1038/nmat1163 ↗
27. Vila-Fungueiriño J. M. · Chem. Mater. · 2014 · 26 · 148010.1021/cm403868y ↗
28. Vila-Fungueiriño J. M. · Thin Solid Films · 2014 · 553 · 8110.1016/j.tsf.2013.11.060 ↗
29. Klenov D. O. · Appl. Phys. Lett. · 2003 · 82 · 342710.1063/1.1575503 ↗
30. Balcells L. I. · Nanotechnology · 2008 · 19 · 13530710.1088/0957-4484/19/13/135307 ↗
31. Balcells L. I. · J. Appl. Phys. · 2008 · 103 · 07E30310.1063/1.2833760 ↗
32. Balcells L. I. · Small · 2008 · 4 · 36510.1002/smll.200700537 ↗
33. Da Costa V. · J. Magn. Magn. Mater. · 2003 · 258 · 258
34. Jonnson-Akerman B. J. · Appl. Phys. Lett. · 2000 · 77 · 187010.1063/1.1310633 ↗
35. Simmons J. G. · J. Appl. Phys. · 1963 · 34 · 258110.1063/1.1729774 ↗
36. Brinkman W. F. · J. Appl. Phys. · 1970 · 41 · 191510.1063/1.1659141 ↗
37. Sun J. Z. · Appl. Phys. Lett. · 1997 · 70 · 176910.1063/1.118651 ↗