Facile Synthesis and Enhanced Ultraviolet Emission of ZnO Nanorods Prepared by Vapor-Confined Face-to-Face Annealing
Source abstract
Abstract
In this study, we report a novel regrowth method of sol-gel-prepared ZnO films using a vapor-confined face-to-face annealing (VC-FTFA) technique in which mica was inserted between two films, followed by annealing with the FTFA method. The ZnO nanorods are regrown when zinc acetate dihydrate and zinc chloride (ZnCl2) are used as the solvent, because these generate ZnCl2 vapor. The near-band-edge emission intensity of the ZnO nanorods was enhanced through the VC-FTFA method, increasing significantly by a factor of 56 compared to that of ZnO films annealed in open air at 700 °C. Our method may provide a route toward the facile fabrication of ZnO nanorods.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Nanoscience & Engineering, Inje University, 197, Inje-ro, Gimhae-si, Gyeongsangnam-do 621-749, Republic of Korea
School of Chemical Engineering, Yeungnam University, Gyengsan 712-749, Republic of Korea
Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies (COMSET), Clemson University, Clemson, South Carolina 29634, United States
Funding
National Research Foundation of Korea
References (30)
Show source-provided references
1. Tsivion D. · Science · 2005 · 333 · 100310.1126/science.1208455 ↗
2. Liu X. · J. Phys. Chem. C · 2013 · 117 · 1071610.1021/jp312850w ↗
3. Yin H. · Nanoscale · 2013 · 5 · 704610.1039/c3nr01938a ↗
4. Li S. · RSC Adv. · 2014 · 4 · 2439910.1039/c4ra02645d ↗
5. Yu R. · Adv. Funct. Mater. · 2013 · 23 · 586810.1002/adfm.201300593 ↗
6. Mohammad S. N. · Nanotechnology · 2013 · 24 · 45520110.1088/0957-4484/24/45/455201 ↗
7. Nguyen H. · Sens. Actuators, B · 2014 · 193 · 88810.1016/j.snb.2013.11.043 ↗
8. Qian F. · Nano Lett. · 2005 · 5 · 228710.1021/nl051689e ↗
9. Makhonin M. N. · Nano Lett. · 2013 · 13 · 86110.1021/nl303075q ↗
10. Huang M. H. · Science · 2001 · 292 · 189710.1126/science.1060367 ↗
11. Lu Y. · Electron. Lett. · 2006 · 42 · 130910.1049/el:20062348 ↗
12. Suh D.-I. · J. Phys. Chem. C · 2008 · 112 · 127610.1021/jp709673s ↗
13. Fan J. · J. Phys. Chem. C · 2013 · 117 · 1634910.1021/jp405557b ↗
14. Barreca D. · CrystEngComm · 2010 · 12 · 341910.1039/c0ce00139b ↗
15. Guo P. · Adv. Mater. · 2012 · 24 · 264210.1002/adma.201104412 ↗
16. Chen C.-Y. · ACS Nano · 2011 · 5 · 670710.1021/nn202251m ↗
17. Shi Z.-F. · CrystEngComm · 2014 · 16 · 45510.1039/C3CE41733F ↗
18. Zhu R. · Nano Lett. · 2013 · 13 · 517110.1021/nl402476u ↗
19. Hou J.-L. · Prog. Photovoltaics · 2013 · 21 · 164510.1002/pip.2304 ↗
20. Shinaqawa T. · RSC Adv. · 2014 · 4 · 3099910.1039/C4RA04342A ↗
21. Pu X. · RSC Adv. · 2014 · 4 · 2314910.1039/C4RA02730B ↗
22. Kanber H. · J. Appl. Phys. · 1985 · 57 · 473210.1063/1.335336 ↗
23. Paraguay D F. · Thin Solid Films · 1999 · 350 · 19210.1016/S0040-6090(99)00050-4 ↗
24. Lin C.-C. · Mater. Chem. Phys. · 2009 · 113 · 33410.1016/j.matchemphys.2008.07.070 ↗
25. Vanheusden K. · Appl. Phys. Lett. · 1996 · 68 · 40310.1063/1.116699 ↗
26. Wang Y. G. · J. Cryst. Growth · 2003 · 259 · 33510.1016/j.jcrysgro.2003.07.015 ↗
27. Özgür Ü. · J. Appl. Phys. · 2005 · 98 · 04130110.1063/1.1992666 ↗
28. Johnston K. · Phys. Rev. B · 2006 · 73 · 16521210.1103/PhysRevB.73.165212 ↗
29. Chiu H.-M. · ACS Appl. Mater. Interfaces · 2014 · 6 · 518310.1021/am500470y ↗
30. Schuster F. · ACS Nano · 2014 · 8 · 437610.1021/nn406134e ↗