journal article·2020-12-02

Spontaneous Formation of a ZnO Monolayer by the Redox Reaction of Zn on Graphene Oxide

Seungwoo Son, Yeonchoo Cho, Hyo-Ki Hong, Jongyeong Lee, Jung Hwa Kim, Kangsik Kim, Yeongdong Lee, Aram Yoon, Hyeon-Jin Shin, Zonghoon Lee

ACS Applied Materials & Interfaces· Volume 12· Issue 48
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Abstract

Graphene-based two-dimensional heterostructures are of substantial interest both for fundamental studies and their various potential applications. Particularly interesting are atomically thin semiconducting oxides on graphene, which uniquely combine a wide band gap and optical transparency. Here, we report the atomic-scale investigation of a novel self-formation of a ZnO monolayer from the Zn metal on a graphene oxide substrate. The spontaneous oxidation of the ultrathin Zn metal occurs by a reaction with oxygen supplied from the graphene oxide substrate, and graphene oxide is deoxygenated by a transfer of oxygen from O-containing functional groups to the zinc metal. The ZnO monolayer formed by this spontaneous redox reaction shows a graphene-like structure and a band gap of about 4 eV. This study demonstrates a unique and straightforward synthetic route to atomically thin two-dimensional heterostructures made from a two-dimensional metal oxide and graphene, formed by the spontaneous redox reaction of a very thin metal layer directly deposited on graphene oxide.
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Research context

OpenAlex topics: Graphene research and applications · ZnO doping and properties · 2D Materials and Applications

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Affiliations

Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea

Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea

Samsung Advanced Institute of Technology (SAIT), Suwon 16678, Republic of Korea

Funding

Samsung · Institute for Basic Science

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