journal article·2011-07-27Open access

Enhanced Capacitance of Composite Anodic ZrO2 Films Comprising High Permittivity Oxide Nanocrystals and Highly Resistive Amorphous Oxide Matrix

Hiroki Habazaki, Shun Koyama, Yoshitaka Aoki, Norihito Sakaguchi, Shinji Nagata

Abstract

Anodic oxide films with nanocrystalline tetragonal ZrO(2) precipitated in an amorphous oxide matrix were formed on Zr-Si and Zr-Al alloys and had significantly enhanced capacitance in comparison with those formed on zirconium metal. The capacitance enhancement was associated with the formation of a high-temperature stable tetragonal ZrO(2) phase with high relative permittivity as well as increased ionic resistivity, which reduces the thickness of anodic oxide films at a certain formation voltage. However, there is a general empirical trend that single-phase materials with higher permittivity have lower ionic resistivity. This study presents a novel material design based on a nanocrystalline-amorphous composite anodic oxide film for capacitor applications.
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Research context

OpenAlex topics: Semiconductor materials and devices · Anodic Oxide Films and Nanostructures · Ferroelectric and Piezoelectric Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Division of Materials Chemistry, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido, 060-8628, Japan

Center for Advanced Research of Energy and Materials, Faculty of Engineering, Hokkaido University, Sapporo, Hokkaido, 060-8628, Japan

Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan

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