Photoreversible Resists for UV Nanoimprint Lithography (UV-NIL)

We designed a novel photoreversible resist for UV-NIL that comprises a photoreversible cross-linker (2-[(4-methyl-2-oxo-2 h-1-benzopyran-7-yl)oxy] ethyl ester, AHEMC). Under exposure of 365 nm UV light, this photoreversible resist can form a cross-linked network via radical polymerization of acrylate groups and photodimerization of coumarin moieties. The formed polymer networks containing coumarin dimer moieties could be degraded via illumination of point light source (254 nm). The reversibility of cross-linked system was helpful to refresh mold easily and release the adhered curing resist at room temperature.