journal article·2024-05-15

Microheater Chips with Carbon Nanotube Resistors

Zhongyuan Zhao, Jie Zhao, Liang Liang, Yushi Zhou, Zhen Mei, Yuheng Li, Zuoping Zhou, Lina Zhang, Shoushan Fan, Qunqing Li, Yang Wei

ACS Applied Materials & Interfaces· Volume 16· Issue 19
Publisher page

Abstract

The specific and excellent properties of the low-dimensional nanomaterials have made them promising building blocks to be integrated into microelectromechanical systems with high performances. Here, we present a new microheater chip for in situ TEM, in which a cross-stacked superaligned carbon nanotube (CNT) film resistor is located on a suspended SiN x membrane via van der Waals (vdW) interactions. The CNT microheater has a fast high-temperature response and low power consumption, thanks to the micro/nanostructure of the CNT materials. Moreover, the membrane bulging amplitude is significantly reduced to only ∼100 nm at 800 °C for the vdW interaction between the CNTs and the SiN x membrane. An in situ observation of the Sn melting process is successfully conducted with the assistance of a customized flexible temperature control system. The uniform wafer-scaled CNT films enable a high level of consistency and cost-effective mass production of such chips. The as-developed in situ chips, as well as the related techniques, hold great promise in nanoscience, materials science, and electrochemistry.
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Research context

OpenAlex topics: Graphene research and applications · Nanowire Synthesis and Applications · Carbon Nanotubes in Composites

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China

Funding

Guangdong Provincial Department of Science and Technology · National Key Research and Development Program of China · National Natural Science Foundation of China

References (49)

Show source-provided references
1. 10.1098/rsta.2009.009410.1098/rsta.2009.0094 ↗
2. 10.1016/j.cossms.2016.05.01010.1016/j.cossms.2016.05.010 ↗
3. 10.1557/mrs2008.2010.1557/mrs2008.20 ↗
4. Garza, H. H. P.; Pivak, Y.; Luna, L. M.; van Omme, J. T.; Spruit, R. G.; Sholkina, M.; Pen, M.; Xu, Q. In MEMS-based sample carriers for simultaneous heating and biasing experiments: a platform for in-situ TEM analysis, 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017; IEEE, 2017; pp 2155–2158.10.1109/TRANSDUCERS.2017.7994502 ↗
5. 10.1021/jp993593c10.1021/jp993593c ↗
6. 10.1039/c3cc46673f10.1039/c3cc46673f ↗
7. 10.1021/acs.nanolett.5b0443910.1021/acs.nanolett.5b04439 ↗
8. 10.1038/s41467-018-06959-810.1038/s41467-018-06959-8 ↗
9. 10.1002/jemt.2262310.1002/jemt.22623 ↗
10. 10.1007/BF0241105910.1007/BF02411059 ↗
11. 10.1038/ncomms1220610.1038/ncomms12206 ↗
12. 10.1002/smll.20160425910.1002/smll.201604259 ↗
13. 10.1016/j.ultramic.2016.08.00710.1016/j.ultramic.2016.08.007 ↗
14. 10.1002/adma.20090256110.1002/adma.200902561 ↗
15. 10.1021/acssensors.5b0030210.1021/acssensors.5b00302 ↗
16. 10.1038/srep1954510.1038/srep19545 ↗
17. 10.1002/jemt.2067310.1002/jemt.20673 ↗
18. 10.1557/JMR.2005.022510.1557/JMR.2005.0225 ↗
19. 10.1016/j.ultramic.2018.05.00510.1016/j.ultramic.2018.05.005 ↗
20. 10.1109/JSEN.2016.262117910.1109/JSEN.2016.2621179 ↗
21. 10.1109/JMEMS.2017.275740210.1109/JMEMS.2017.2757402 ↗
22. 10.1016/j.jpowsour.2006.12.07210.1016/j.jpowsour.2006.12.072 ↗
23. 10.1109/JMEMS.2010.206744210.1109/JMEMS.2010.2067442 ↗
24. 10.1117/1.JMM.14.2.02500310.1117/1.JMM.14.2.025003 ↗
25. 10.1016/j.sna.2007.04.00610.1016/j.sna.2007.04.006 ↗
26. Velmathi, G.; Ramshanker, N.; Mohan, S. In Design, electro-thermal simulation and geometrical optimization of double spiral shaped microheater on a suspended membrane for gas sensing, IECON 2010–36th Annual Conference on IEEE Industrial Electronics Society, 2010; IEEE, 2010; pp 1258–1262.10.1109/IECON.2010.5675550 ↗
27. 10.1016/j.matpr.2020.11.62310.1016/j.matpr.2020.11.623 ↗
28. 10.1016/j.snb.2021.13090110.1016/j.snb.2021.130901 ↗
29. 10.1007/s10544-021-00595-810.1007/s10544-021-00595-8 ↗
30. 10.1007/s00542-020-05079-y10.1007/s00542-020-05079-y ↗
31. 10.1021/ja802305910.1021/ja8023059 ↗
32. 10.1038/nnano.2010.17210.1038/nnano.2010.172 ↗
33. 10.1021/nl052453d10.1021/nl052453d ↗
34. 10.1016/j.spmi.2017.09.05110.1016/j.spmi.2017.09.051 ↗
35. 10.1021/acsphotonics.9b0066710.1021/acsphotonics.9b00667 ↗
36. 10.1021/nl300776910.1021/nl3007769 ↗
37. 10.1002/adma.20100398910.1002/adma.201003989 ↗
38. 10.1038/419801a10.1038/419801a ↗
39. 10.1021/acs.nanolett.2c0351010.1021/acs.nanolett.2c03510 ↗
40. 10.1016/j.sna.2009.03.01710.1016/j.sna.2009.03.017 ↗
41. 10.1016/j.sna.2011.11.02310.1016/j.sna.2011.11.023 ↗
42. 10.1016/j.sna.2008.05.00710.1016/j.sna.2008.05.007 ↗
43. 10.1063/1.169823310.1063/1.1698233 ↗
44. 10.1088/0960-1317/19/11/11501110.1088/0960-1317/19/11/115011 ↗
45. 10.1109/JMEMS.2010.204119010.1109/JMEMS.2010.2041190 ↗
46. 10.1088/0957-4484/19/02/02560710.1088/0957-4484/19/02/025607 ↗
47. 10.1021/acsami.7b1013610.1021/acsami.7b10136 ↗
48. 10.1002/adma.20050252810.1002/adma.200502528 ↗
49. 10.1002/adfm.20090196010.1002/adfm.200901960 ↗