DataVXACS Applied Materials & InterfacesPaper
journal article·2024-01-24

Construction of a Low-Resistivity Carbon Layer To Improve Performance in Dimethyl Sulfoxide-Based Kesterite Solar Cells

Yiming Wang, Yanchun Yang, Ruijian Liu, Shuyu Li, Hongmei Luan, Lei Wang, Letu Siqin, Chengjun Zhu

ACS Applied Materials & Interfaces· Volume 16· Issue 3
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Source abstract

Abstract

Morphology of the absorber plays a decisive role in photoelectric conversion efficiency (PCE) of kersterite solar cells. Cu 2 ZnSn(S,Se) 4 (CZTSSe) grain prepared from dimethyl sulfoxide (DMSO)-based solution easily grows into large grains, which can lead to the formation of some holes at the back of the absorber. These holes cause the recombination of photocarriers and greatly weaken the performance of CZTSSe devices. Here, trace amounts of thioglycolic acid (TGA) are introduced to the DMSO-based solution, and a combination of TGA and metal is formed in the absorber, leading to the formation of fine grains in the CZTSSe absorber. Next, post-annealing (PA) in a N 2 atmosphere is performed to promote Na diffusion, helping the transition from a fine-grain layer to a low-resistivity carbon layer at the interface between CZTSSe and Mo and avoiding the drawbacks of the DMSO-based system. Finally, the champion PCE of the CZTSSe device can be improved to 10.05% from 8.06%. The conclusions demonstrate that the construction of a carbon layer can boost the performance of CZTSSe devices.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region, School of Physical Science and Technology, Inner Mongolia University, 235 West University Road, Hohhot, Inner Mongolia 010021, People’s Republic of China

School of Physics and Electronic Information, Inner Mongolia Normal University, 81 Zhaowuda Road, Hohhot, Inner Mongolia 010022, People’s Republic of China

Funding

Postdoctoral Research Foundation of China · Natural Science Foundation of Inner Mongolia Autonomous Region · Inner Mongolia University · National Natural Science Foundation of China · Chinese Academy of Sciences · Key Laboratory of Semiconductor Photovoltaic Technology and Energy Materials of Inner Mongolia Autonomous Region · Local Science and Technology Development Fund Projects Guided by the Central Government

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