journal article·2023-12-20

Organic Phototransistor with Light-Induced Contact Modulation and Sensitivity Enhancement Using a C60/C70:TAPC Hybrid Channel

Dongho Choi, Hyukyun Kwon, Haechang Lee, Kyu-Myung Lee, Yongsup Park, Hanul Moon, Seunghyup Yoo

ACS Applied Materials & Interfaces· Volume 15· Issue 50
Publisher page

Abstract

Organic phototransistors (OPTs) are attracting a significant degree of interest as devices that have the potential to play multiple roles, including light sensing, signal amplification, and switching for addressing when they are used for matrix arrays. However, it has been challenging to realize OPTs that can perform all of these roles simultaneously at a sufficient performance level because the channel materials with high carrier mobility often exhibit relatively low photoabsorption. In this work, we propose OPTs with a hybrid bilayer channel consisting of a neat C 60 layer and a bulk-heterojunction layer of C 70 and 1,1-bis(4-bis(4-methyl-phenyl)-amino-phenyl)-cyclohexane (TAPC) as a possible solution to this issue. While the C 60 layer serves as the main carrier-transporting layer with high mobility, the C 70:TAPC layer operates as a photoactive layer wherein the photogenerated carriers provide photoinduced contact modulation that leads to a significant enhancement in photosensitivity. With the optimal design maximizing the absorption, the proposed hybrid-channel OPTs show a responsivity of ca. 180 A/W, which is 4.5 times higher than that of the control OPT with a C 70:TAPC single channel. The operation mechanism and the origin for the improvement are verified by an in-depth analysis of the photoinduced modulation of the channel and contact resistances of the OPTs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea

Samsung Electronics, Hwaseong-si, Gyeonggido 18448, Republic of Korea

Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, Seoul 02447, Republic of Korea

Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea

Department of Semiconductor & Department of Chemical Engineering (BK21 FOUR Graduate Program), Dong-A University, Busan 49315, Republic of Korea

Funding

National Research Foundation of Korea · Ministry of Trade, Industry and Energy

References (51)

Show source-provided references
1. 10.1038/ncomms1179110.1038/ncomms11791 ↗
2. 10.1021/cm102405210.1021/cm1024052 ↗
3. 10.1038/s41598-018-27976-z10.1038/s41598-018-27976-z ↗
4. 10.1109/JPROC.2009.202241810.1109/JPROC.2009.2022418 ↗
5. 10.1126/sciadv.aas953010.1126/sciadv.aas9530 ↗
6. 10.1126/science.aba262410.1126/science.aba2624 ↗
7. 10.1038/s41928-019-0354-710.1038/s41928-019-0354-7 ↗
8. 10.1002/adma.20120497910.1002/adma.201204979 ↗
9. 10.1021/acsami.8b0662510.1021/acsami.8b06625 ↗
10. 10.1002/cptc.20190019810.1002/cptc.201900198 ↗
11. 10.1002/advs.20150043510.1002/advs.201500435 ↗
12. 10.1002/adfm.20190711310.1002/adfm.201907113 ↗
13. 10.1021/acsami.6b1119310.1021/acsami.6b11193 ↗
14. 10.1039/c3nr03989g10.1039/c3nr03989g ↗
15. 10.1063/1.295798110.1063/1.2957981 ↗
16. 10.1002/adfm.20080143810.1002/adfm.200801438 ↗
17. 10.1063/1.173927810.1063/1.1739278 ↗
18. 10.1002/adma.20110217310.1002/adma.201102173 ↗
19. 10.1021/acsomega.7b0165210.1021/acsomega.7b01652 ↗
20. 10.1038/s41467-018-06907-610.1038/s41467-018-06907-6 ↗
21. 10.1038/nmat423710.1038/nmat4237 ↗
22. 10.1038/s41467-017-00805-z10.1038/s41467-017-00805-z ↗
23. 10.1016/j.orgel.2013.02.00510.1016/j.orgel.2013.02.005 ↗
24. 10.1002/adma.20190076310.1002/adma.201900763 ↗
25. 10.1063/1.236444910.1063/1.2364449 ↗
26. 10.1063/1.357533410.1063/1.3575334 ↗
27. 10.1016/j.orgel.2014.06.00710.1016/j.orgel.2014.06.007 ↗
28. 10.1016/j.tsf.2016.10.04810.1016/j.tsf.2016.10.048 ↗
29. 10.1039/c3tc30089g10.1039/c3tc30089g ↗
30. 10.1021/acsami.8b1200910.1021/acsami.8b12009 ↗
31. 10.1038/nnano.2012.6010.1038/nnano.2012.60 ↗
32. 10.1002/adfm.20170417310.1002/adfm.201704173 ↗
33. 10.1021/acsami.5b1170910.1021/acsami.5b11709 ↗
34. 10.1021/acsami.8b1159610.1021/acsami.8b11596 ↗
35. 10.1038/nphoton.2017.1510.1038/nphoton.2017.15 ↗
36. 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q ↗
37. 10.1063/1.11753010.1063/1.117530 ↗
38. 10.1109/TED.2017.265021610.1109/TED.2017.2650216 ↗
39. 10.1063/1.11152710.1063/1.111527 ↗
40. 10.1038/srep0918110.1038/srep09181 ↗
41. 10.1021/acs.nanolett.1c0318510.1021/acs.nanolett.1c03185 ↗
42. 10.1109/JSTQE.2010.204163710.1109/JSTQE.2010.2041637 ↗
43. 10.1002/aenm.20150246610.1002/aenm.201502466 ↗
44. 10.1116/1.220285810.1116/1.2202858 ↗
45. 10.1016/j.orgel.2016.04.03810.1016/j.orgel.2016.04.038 ↗
46. 10.1002/aelm.20160009710.1002/aelm.201600097 ↗
47. 10.1038/s41467-021-23679-810.1038/s41467-021-23679-8 ↗
48. 10.3389/fphys.2021.80845110.3389/fphys.2021.808451 ↗
49. 10.1016/S0038-1101(02)00204-610.1016/S0038-1101(02)00204-6 ↗
50. 10.1002/adma.20120131110.1002/adma.201201311 ↗
51. 10.1063/1.280428810.1063/1.2804288 ↗